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Cavity-enhanced single artificial atoms in silicon

Author

Listed:
  • Valeria Saggio

    (Massachusetts Institute of Technology)

  • Carlos Errando-Herranz

    (Massachusetts Institute of Technology
    University of Münster)

  • Samuel Gyger

    (Massachusetts Institute of Technology
    KTH Royal Institute of Technology)

  • Christopher Panuski

    (Massachusetts Institute of Technology)

  • Mihika Prabhu

    (Massachusetts Institute of Technology)

  • Lorenzo Santis

    (Massachusetts Institute of Technology
    Delft University of Technology)

  • Ian Christen

    (Massachusetts Institute of Technology)

  • Dalia Ornelas-Huerta

    (Massachusetts Institute of Technology)

  • Hamza Raniwala

    (Massachusetts Institute of Technology)

  • Connor Gerlach

    (Massachusetts Institute of Technology)

  • Marco Colangelo

    (Massachusetts Institute of Technology)

  • Dirk Englund

    (Massachusetts Institute of Technology)

Abstract

Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile photonic qubits. Recently, silicon has emerged as a promising host material where artificial atoms with long spin coherence times and emission into the telecommunications band can be controllably fabricated. This field leverages the maturity of silicon photonics to embed artificial atoms into the world’s most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of these atoms, which can be addressed by coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms in silicon (G-centers) at telecommunication wavelengths. Our results show enhancement of their zero phonon line intensities along with highly pure single-photon emission, while their lifetime remains statistically unchanged. We suggest the possibility of two different existing types of G-centers, shedding new light on the properties of silicon emitters.

Suggested Citation

  • Valeria Saggio & Carlos Errando-Herranz & Samuel Gyger & Christopher Panuski & Mihika Prabhu & Lorenzo Santis & Ian Christen & Dalia Ornelas-Huerta & Hamza Raniwala & Connor Gerlach & Marco Colangelo , 2024. "Cavity-enhanced single artificial atoms in silicon," Nature Communications, Nature, vol. 15(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-49302-0
    DOI: 10.1038/s41467-024-49302-0
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