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All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity

Author

Listed:
  • W. Redjem

    (University of California Berkeley)

  • Y. Zhiyenbayev

    (University of California Berkeley)

  • W. Qarony

    (University of California Berkeley)

  • V. Ivanov

    (Lawrence Berkeley National Laboratory)

  • C. Papapanos

    (University of California Berkeley)

  • W. Liu

    (Lawrence Berkeley National Laboratory)

  • K. Jhuria

    (Lawrence Berkeley National Laboratory)

  • Z. Y. Al Balushi

    (University of California Berkeley
    Lawrence Berkeley National Laboratory)

  • S. Dhuey

    (Lawrence Berkeley National Laboratory)

  • A. Schwartzberg

    (Lawrence Berkeley National Laboratory)

  • L. Z. Tan

    (Lawrence Berkeley National Laboratory)

  • T. Schenkel

    (Lawrence Berkeley National Laboratory)

  • B. Kanté

    (University of California Berkeley
    Lawrence Berkeley National Laboratory)

Abstract

Silicon is the most scalable optoelectronic material but has suffered from its inability to generate directly and efficiently classical or quantum light on-chip. Scaling and integration are the most fundamental challenges facing quantum science and technology. We report an all-silicon quantum light source based on a single atomic emissive center embedded in a silicon-based nanophotonic cavity. We observe a more than 30-fold enhancement of luminescence, a near-unity atom-cavity coupling efficiency, and an 8-fold acceleration of the emission from the all-silicon quantum emissive center. Our work opens immediate avenues for large-scale integrated cavity quantum electrodynamics and quantum light-matter interfaces with applications in quantum communication and networking, sensing, imaging, and computing.

Suggested Citation

  • W. Redjem & Y. Zhiyenbayev & W. Qarony & V. Ivanov & C. Papapanos & W. Liu & K. Jhuria & Z. Y. Al Balushi & S. Dhuey & A. Schwartzberg & L. Z. Tan & T. Schenkel & B. Kanté, 2023. "All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-38559-6
    DOI: 10.1038/s41467-023-38559-6
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    Cited by:

    1. Lukasz Komza & Polnop Samutpraphoot & Mutasem Odeh & Yu-Lung Tang & Milena Mathew & Jiu Chang & Hanbin Song & Myung-Ki Kim & Yihuang Xiong & Geoffroy Hautier & Alp Sipahigil, 2024. "Indistinguishable photons from an artificial atom in silicon photonics," Nature Communications, Nature, vol. 15(1), pages 1-5, December.
    2. Aaron M. Day & Madison Sutula & Jonathan R. Dietz & Alexander Raun & Denis D. Sukachev & Mihir K. Bhaskar & Evelyn L. Hu, 2024. "Electrical manipulation of telecom color centers in silicon," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    3. Adam Johnston & Ulises Felix-Rendon & Yu-En Wong & Songtao Chen, 2024. "Cavity-coupled telecom atomic source in silicon," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    4. Valeria Saggio & Carlos Errando-Herranz & Samuel Gyger & Christopher Panuski & Mihika Prabhu & Lorenzo Santis & Ian Christen & Dalia Ornelas-Huerta & Hamza Raniwala & Connor Gerlach & Marco Colangelo , 2024. "Cavity-enhanced single artificial atoms in silicon," Nature Communications, Nature, vol. 15(1), pages 1-6, December.

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