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Cavity-coupled telecom atomic source in silicon

Author

Listed:
  • Adam Johnston

    (Rice University
    Rice University)

  • Ulises Felix-Rendon

    (Rice University
    Rice University)

  • Yu-En Wong

    (Rice University
    Rice University)

  • Songtao Chen

    (Rice University
    Rice University)

Abstract

Novel T centers in silicon hold great promise for quantum networking applications due to their telecom band optical transitions and the long-lived ground state electronic spins. An open challenge for advancing the T center platform is to enhance its weak and slow zero phonon line (ZPL) emission. In this work, by integrating single T centers with a low-loss, small mode-volume silicon photonic crystal cavity, we demonstrate an enhancement of the fluorescence decay rate by a factor of F = 6.89. Efficient photon extraction enables the system to achieve an average ZPL photon outcoupling rate of 73.3 kHz under saturation, which is about two orders of magnitude larger than the previously reported value. The dynamics of the coupled system is well modeled by solving the Lindblad master equation. These results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.

Suggested Citation

  • Adam Johnston & Ulises Felix-Rendon & Yu-En Wong & Songtao Chen, 2024. "Cavity-coupled telecom atomic source in silicon," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-46643-8
    DOI: 10.1038/s41467-024-46643-8
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    References listed on IDEAS

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    Cited by:

    1. Aaron M. Day & Madison Sutula & Jonathan R. Dietz & Alexander Raun & Denis D. Sukachev & Mihir K. Bhaskar & Evelyn L. Hu, 2024. "Electrical manipulation of telecom color centers in silicon," Nature Communications, Nature, vol. 15(1), pages 1-8, December.

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