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Wafer-scale nanofabrication of telecom single-photon emitters in silicon

Author

Listed:
  • Michael Hollenbach

    (Institute of Ion Beam Physics and Materials Research
    Technische Universität Dresden)

  • Nico Klingner

    (Institute of Ion Beam Physics and Materials Research)

  • Nagesh S. Jagtap

    (Institute of Ion Beam Physics and Materials Research
    Technische Universität Dresden)

  • Lothar Bischoff

    (Institute of Ion Beam Physics and Materials Research)

  • Ciarán Fowley

    (Institute of Ion Beam Physics and Materials Research)

  • Ulrich Kentsch

    (Institute of Ion Beam Physics and Materials Research)

  • Gregor Hlawacek

    (Institute of Ion Beam Physics and Materials Research)

  • Artur Erbe

    (Institute of Ion Beam Physics and Materials Research)

  • Nikolay V. Abrosimov

    (Leibniz-Institut für Kristallzüchtung (IKZ))

  • Manfred Helm

    (Institute of Ion Beam Physics and Materials Research
    Technische Universität Dresden)

  • Yonder Berencén

    (Institute of Ion Beam Physics and Materials Research)

  • Georgy V. Astakhov

    (Institute of Ion Beam Physics and Materials Research)

Abstract

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.

Suggested Citation

  • Michael Hollenbach & Nico Klingner & Nagesh S. Jagtap & Lothar Bischoff & Ciarán Fowley & Ulrich Kentsch & Gregor Hlawacek & Artur Erbe & Nikolay V. Abrosimov & Manfred Helm & Yonder Berencén & Georgy, 2022. "Wafer-scale nanofabrication of telecom single-photon emitters in silicon," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-35051-5
    DOI: 10.1038/s41467-022-35051-5
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    References listed on IDEAS

    as
    1. P. Walther & K. J. Resch & T. Rudolph & E. Schenck & H. Weinfurter & V. Vedral & M. Aspelmeyer & A. Zeilinger, 2005. "Experimental one-way quantum computing," Nature, Nature, vol. 434(7030), pages 169-176, March.
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    Citations

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    Cited by:

    1. Aaron M. Day & Madison Sutula & Jonathan R. Dietz & Alexander Raun & Denis D. Sukachev & Mihir K. Bhaskar & Evelyn L. Hu, 2024. "Electrical manipulation of telecom color centers in silicon," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    2. Pasquale Cilibrizzi & Muhammad Junaid Arshad & Benedikt Tissot & Nguyen Tien Son & Ivan G. Ivanov & Thomas Astner & Philipp Koller & Misagh Ghezellou & Jawad Ul-Hassan & Daniel White & Christiaan Bekk, 2023. "Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    3. Mihika Prabhu & Carlos Errando-Herranz & Lorenzo Santis & Ian Christen & Changchen Chen & Connor Gerlach & Dirk Englund, 2023. "Individually addressable and spectrally programmable artificial atoms in silicon photonics," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
    4. K. Jhuria & V. Ivanov & D. Polley & Y. Zhiyenbayev & W. Liu & A. Persaud & W. Redjem & W. Qarony & P. Parajuli & Q. Ji & A. J. Gonsalves & J. Bokor & L. Z. Tan & B. Kanté & T. Schenkel, 2024. "Programmable quantum emitter formation in silicon," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    5. Valeria Saggio & Carlos Errando-Herranz & Samuel Gyger & Christopher Panuski & Mihika Prabhu & Lorenzo Santis & Ian Christen & Dalia Ornelas-Huerta & Hamza Raniwala & Connor Gerlach & Marco Colangelo , 2024. "Cavity-enhanced single artificial atoms in silicon," Nature Communications, Nature, vol. 15(1), pages 1-6, December.

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