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Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function

Author

Listed:
  • Ran Xue

    (Forschungszentrum Jülich GmbH and RWTH Aachen University)

  • Max Beer

    (Forschungszentrum Jülich GmbH and RWTH Aachen University)

  • Inga Seidler

    (Forschungszentrum Jülich GmbH and RWTH Aachen University)

  • Simon Humpohl

    (Forschungszentrum Jülich GmbH and RWTH Aachen University
    ARQUE Systems GmbH)

  • Jhih-Sian Tu

    (Forschungszentrum Jülich)

  • Stefan Trellenkamp

    (Forschungszentrum Jülich)

  • Tom Struck

    (Forschungszentrum Jülich GmbH and RWTH Aachen University
    ARQUE Systems GmbH)

  • Hendrik Bluhm

    (Forschungszentrum Jülich GmbH and RWTH Aachen University
    ARQUE Systems GmbH)

  • Lars R. Schreiber

    (Forschungszentrum Jülich GmbH and RWTH Aachen University
    ARQUE Systems GmbH)

Abstract

The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Single electrons have been adiabatically transported while confined to a moving quantum dot in short, all-electrical Si/SiGe shuttle device, called quantum bus (QuBus). Here we show a QuBus spanning a length of 10 μm and operated by only six simply-tunable voltage pulses. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 μm) is (99.7 ± 0.3) %. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in 28Si/SiGe, promises long-range spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.

Suggested Citation

  • Ran Xue & Max Beer & Inga Seidler & Simon Humpohl & Jhih-Sian Tu & Stefan Trellenkamp & Tom Struck & Hendrik Bluhm & Lars R. Schreiber, 2024. "Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-46519-x
    DOI: 10.1038/s41467-024-46519-x
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    References listed on IDEAS

    as
    1. Akito Noiri & Kenta Takeda & Takashi Nakajima & Takashi Kobayashi & Amir Sammak & Giordano Scappucci & Seigo Tarucha, 2022. "Fast universal quantum gate above the fault-tolerance threshold in silicon," Nature, Nature, vol. 601(7893), pages 338-342, January.
    2. Xiao Xue & Maximilian Russ & Nodar Samkharadze & Brennan Undseth & Amir Sammak & Giordano Scappucci & Lieven M. K. Vandersypen, 2022. "Quantum logic with spin qubits crossing the surface code threshold," Nature, Nature, vol. 601(7893), pages 343-347, January.
    3. Tom Struck & Mats Volmer & Lino Visser & Tobias Offermann & Ran Xue & Jhih-Sian Tu & Stefan Trellenkamp & Łukasz Cywiński & Hendrik Bluhm & Lars R. Schreiber, 2024. "Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    4. Akito Noiri & Kenta Takeda & Takashi Nakajima & Takashi Kobayashi & Amir Sammak & Giordano Scappucci & Seigo Tarucha, 2022. "A shuttling-based two-qubit logic gate for linking distant silicon quantum processors," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
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