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Programmable quantum emitter formation in silicon

Author

Listed:
  • K. Jhuria

    (Lawrence Berkeley National Laboratory)

  • V. Ivanov

    (Lawrence Berkeley National Laboratory
    Virginia Tech National Security Institute)

  • D. Polley

    (University of California
    BITS Pilani-Hyderabad Campus)

  • Y. Zhiyenbayev

    (University of California)

  • W. Liu

    (Lawrence Berkeley National Laboratory)

  • A. Persaud

    (Lawrence Berkeley National Laboratory)

  • W. Redjem

    (University of California
    SUNY Albany)

  • W. Qarony

    (University of California)

  • P. Parajuli

    (Lawrence Berkeley National Laboratory)

  • Q. Ji

    (Lawrence Berkeley National Laboratory)

  • A. J. Gonsalves

    (Lawrence Berkeley National Laboratory)

  • J. Bokor

    (University of California)

  • L. Z. Tan

    (Lawrence Berkeley National Laboratory)

  • B. Kanté

    (University of California
    Lawrence Berkeley National Laboratory)

  • T. Schenkel

    (Lawrence Berkeley National Laboratory)

Abstract

Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.

Suggested Citation

  • K. Jhuria & V. Ivanov & D. Polley & Y. Zhiyenbayev & W. Liu & A. Persaud & W. Redjem & W. Qarony & P. Parajuli & Q. Ji & A. J. Gonsalves & J. Bokor & L. Z. Tan & B. Kanté & T. Schenkel, 2024. "Programmable quantum emitter formation in silicon," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-48714-2
    DOI: 10.1038/s41467-024-48714-2
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    References listed on IDEAS

    as
    1. Daniel B. Higginbottom & Alexander T. K. Kurkjian & Camille Chartrand & Moein Kazemi & Nicholas A. Brunelle & Evan R. MacQuarrie & James R. Klein & Nicholas R. Lee-Hone & Jakub Stacho & Myles Ruether , 2022. "Optical observation of single spins in silicon," Nature, Nature, vol. 607(7918), pages 266-270, July.
    2. Mihika Prabhu & Carlos Errando-Herranz & Lorenzo Santis & Ian Christen & Changchen Chen & Connor Gerlach & Dirk Englund, 2023. "Individually addressable and spectrally programmable artificial atoms in silicon photonics," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
    3. Peter Deák & Péter Udvarhelyi & Gergő Thiering & Adam Gali, 2023. "The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium," Nature Communications, Nature, vol. 14(1), pages 1-6, December.
    4. Michael Hollenbach & Nico Klingner & Nagesh S. Jagtap & Lothar Bischoff & Ciarán Fowley & Ulrich Kentsch & Gregor Hlawacek & Artur Erbe & Nikolay V. Abrosimov & Manfred Helm & Yonder Berencén & Georgy, 2022. "Wafer-scale nanofabrication of telecom single-photon emitters in silicon," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
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