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Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

Author

Listed:
  • Seunguk Song

    (Ulsan National Institute of Science and Technology (UNIST)
    University of Pennsylvania)

  • Aram Yoon

    (Ulsan National Institute of Science and Technology (UNIST)
    Institute for Basic Science (IBS))

  • Sora Jang

    (Ulsan National Institute of Science and Technology (UNIST))

  • Jason Lynch

    (University of Pennsylvania)

  • Jihoon Yang

    (Ulsan National Institute of Science and Technology (UNIST))

  • Juwon Han

    (Ulsan National Institute of Science and Technology (UNIST))

  • Myeonggi Choe

    (Ulsan National Institute of Science and Technology (UNIST)
    Institute for Basic Science (IBS))

  • Young Ho Jin

    (Ulsan National Institute of Science and Technology (UNIST))

  • Cindy Yueli Chen

    (University of Pennsylvania)

  • Yeryun Cheon

    (Sogang University)

  • Jinsung Kwak

    (Ulsan National Institute of Science and Technology (UNIST)
    Changwon National University)

  • Changwook Jeong

    (Ulsan National Institute of Science and Technology (UNIST))

  • Hyeonsik Cheong

    (Sogang University)

  • Deep Jariwala

    (University of Pennsylvania)

  • Zonghoon Lee

    (Ulsan National Institute of Science and Technology (UNIST)
    Institute for Basic Science (IBS))

  • Soon-Yong Kwon

    (Ulsan National Institute of Science and Technology (UNIST))

Abstract

High-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p-type 2D semiconductors and a suitable metallization process represents important challenges that need to be addressed for future developments of the field. Here, we report the fabrication of scalable p-type 2D single-crystalline 2H-MoTe2 transistor arrays with Fermi-level-tuned 1T’-phase semimetal contact electrodes. By transforming polycrystalline 1T’-MoTe2 to 2H polymorph via abnormal grain growth, we fabricated 4-inch 2H-MoTe2 wafers with ultra-large single-crystalline domains and spatially-controlled single-crystalline arrays at a low temperature (~500 °C). Furthermore, we demonstrate on-chip transistors by lithographic patterning and layer-by-layer integration of 1T’ semimetals and 2H semiconductors. Work function modulation of 1T’-MoTe2 electrodes was achieved by depositing 3D metal (Au) pads, resulting in minimal contact resistance (~0.7 kΩ·μm) and near-zero Schottky barrier height (~14 meV) of the junction interface, and leading to high on-state current (~7.8 μA/μm) and on/off current ratio (~105) in the 2H-MoTe2 transistors.

Suggested Citation

  • Seunguk Song & Aram Yoon & Sora Jang & Jason Lynch & Jihoon Yang & Juwon Han & Myeonggi Choe & Young Ho Jin & Cindy Yueli Chen & Yeryun Cheon & Jinsung Kwak & Changwook Jeong & Hyeonsik Cheong & Deep , 2023. "Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes," Nature Communications, Nature, vol. 14(1), pages 1-14, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-40448-x
    DOI: 10.1038/s41467-023-40448-x
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    References listed on IDEAS

    as
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