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Carrier multiplication in van der Waals layered transition metal dichalcogenides

Author

Listed:
  • Ji-Hee Kim

    (Institute for Basic Science
    Sungkyunkwan University)

  • Matthew R. Bergren

    (Institute for Basic Science
    Sungkyunkwan University
    UbiQD, Inc.)

  • Jin Cheol Park

    (Institute for Basic Science
    Sungkyunkwan University)

  • Subash Adhikari

    (Institute for Basic Science
    Sungkyunkwan University)

  • Michael Lorke

    (Universitat Bremen)

  • Thomas Frauenheim

    (Universitat Bremen)

  • Duk-Hyun Choe

    (Samsung Advanced Institute of Technology (SAIT))

  • Beom Kim

    (Yonsei University)

  • Hyunyong Choi

    (Seoul National University)

  • Tom Gregorkiewicz

    (University of Amsterdam)

  • Young Hee Lee

    (Institute for Basic Science
    Sungkyunkwan University)

Abstract

Carrier multiplication (CM) is a process in which high-energy free carriers relax by generation of additional electron-hole pairs rather than by heat dissipation. CM is promising disruptive improvements in photovoltaic energy conversion and light detection technologies. Current state-of-the-art nanomaterials including quantum dots and carbon nanotubes have demonstrated CM, but are not satisfactory owing to high-energy-loss and inherent difficulties with carrier extraction. Here, we report CM in van der Waals (vdW) MoTe2 and WSe2 films, and find characteristics, commencing close to the energy conservation limit and reaching up to 99% CM conversion efficiency with the standard model. This is demonstrated by ultrafast optical spectroscopy with independent approaches, photo-induced absorption, photo-induced bleach, and carrier population dynamics. Combined with a high lateral conductivity and an optimal bandgap below 1 eV, these superior CM characteristics identify vdW materials as an attractive candidate material for highly efficient and mechanically flexible solar cells in the future.

Suggested Citation

  • Ji-Hee Kim & Matthew R. Bergren & Jin Cheol Park & Subash Adhikari & Michael Lorke & Thomas Frauenheim & Duk-Hyun Choe & Beom Kim & Hyunyong Choi & Tom Gregorkiewicz & Young Hee Lee, 2019. "Carrier multiplication in van der Waals layered transition metal dichalcogenides," Nature Communications, Nature, vol. 10(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-13325-9
    DOI: 10.1038/s41467-019-13325-9
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    Cited by:

    1. Hailu Wang & Hui Xia & Yaqian Liu & Yue Chen & Runzhang Xie & Zhen Wang & Peng Wang & Jinshui Miao & Fang Wang & Tianxin Li & Lan Fu & Piotr Martyniuk & Jianbin Xu & Weida Hu & Wei Lu, 2024. "Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    2. Seunguk Song & Aram Yoon & Sora Jang & Jason Lynch & Jihoon Yang & Juwon Han & Myeonggi Choe & Young Ho Jin & Cindy Yueli Chen & Yeryun Cheon & Jinsung Kwak & Changwook Jeong & Hyeonsik Cheong & Deep , 2023. "Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes," Nature Communications, Nature, vol. 14(1), pages 1-14, December.

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