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Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Author

Listed:
  • Yan Wang

    (University of Cambridge
    Rutgers University)

  • Jong Chan Kim

    (UNIST Central Research Facilities (UCRF) and School of Materials Science and Engineering, UNIST)

  • Ryan J. Wu

    (University of Minnesota)

  • Jenny Martinez

    (California State Polytechnic University, Pomona)

  • Xiuju Song

    (Rutgers University
    Shenzhen University)

  • Jieun Yang

    (University of Cambridge
    Rutgers University)

  • Fang Zhao

    (Princeton University)

  • Andre Mkhoyan

    (University of Minnesota)

  • Hu Young Jeong

    (UNIST Central Research Facilities (UCRF) and School of Materials Science and Engineering, UNIST)

  • Manish Chhowalla

    (University of Cambridge
    Rutgers University
    Shenzhen University)

Abstract

As the dimensions of the semiconducting channels in field-effect transistors decrease, the contact resistance of the metal–semiconductor interface at the source and drain electrodes increases, dominating the performance of devices1–3. Two-dimensional (2D) transition-metal dichalcogenides such as molybdenum disulfide (MoS2) have been demonstrated to be excellent semiconductors for ultrathin field-effect transistors4,5. However, unusually high contact resistance has been observed across the interface between the metal and the 2D transition-metal dichalcogenide3,5–9. Recent studies have shown that van der Waals contacts formed by transferred graphene10,11 and metals12 on few-layered transition-metal dichalcogenides produce good contact properties. However, van der Waals contacts between a three-dimensional metal and a monolayer 2D transition-metal dichalcogenide have yet to be demonstrated. Here we report the realization of ultraclean van der Waals contacts between 10-nanometre-thick indium metal capped with 100-nanometre-thick gold electrodes and monolayer MoS2. Using scanning transmission electron microscopy imaging, we show that the indium and gold layers form a solid solution after annealing at 200 degrees Celsius and that the interface between the gold-capped indium and the MoS2 is atomically sharp with no detectable chemical interaction between the metal and the 2D transition-metal dichalcogenide, suggesting van-der-Waals-type bonding between the gold-capped indium and monolayer MoS2. The contact resistance of the indium/gold electrodes is 3,000 ± 300 ohm micrometres for monolayer MoS2 and 800 ± 200 ohm micrometres for few-layered MoS2. These values are among the lowest observed for three-dimensional metal electrodes evaporated onto MoS2, enabling high-performance field-effect transistors with a mobility of 167 ± 20 square centimetres per volt per second. We also demonstrate a low contact resistance of 220 ± 50 ohm micrometres on ultrathin niobium disulfide (NbS2) and near-ideal band offsets, indicative of defect-free interfaces, in tungsten disulfide (WS2) and tungsten diselenide (WSe2) contacted with indium alloy. Our work provides a simple method of making ultraclean van der Waals contacts using standard laboratory technology on monolayer 2D semiconductors.

Suggested Citation

  • Yan Wang & Jong Chan Kim & Ryan J. Wu & Jenny Martinez & Xiuju Song & Jieun Yang & Fang Zhao & Andre Mkhoyan & Hu Young Jeong & Manish Chhowalla, 2019. "Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors," Nature, Nature, vol. 568(7750), pages 70-74, April.
  • Handle: RePEc:nat:nature:v:568:y:2019:i:7750:d:10.1038_s41586-019-1052-3
    DOI: 10.1038/s41586-019-1052-3
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    Citations

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    Cited by:

    1. Liting Liu & Yang Chen & Long Chen & Biao Xie & Guoli Li & Lingan Kong & Quanyang Tao & Zhiwei Li & Xiaokun Yang & Zheyi Lu & Likuan Ma & Donglin Lu & Xiangdong Yang & Yuan Liu, 2024. "Ultrashort vertical-channel MoS2 transistor using a self-aligned contact," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    2. Taewoo Ha & Yu-Seong Seo & Teun-Teun Kim & Bipin Lamichhane & Young-Hoon Kim & Su Jae Kim & Yousil Lee & Jong Chan Kim & Sang Eon Park & Kyung Ik Sim & Jae Hoon Kim & Yong In Kim & Seon Je Kim & Hu Yo, 2023. "Coherent consolidation of trillions of nucleations for mono-atom step-level flat surfaces," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    3. Xiangbin Cai & Zefei Wu & Xu Han & Yong Chen & Shuigang Xu & Jiangxiazi Lin & Tianyi Han & Pingge He & Xuemeng Feng & Liheng An & Run Shi & Jingwei Wang & Zhehan Ying & Yuan Cai & Mengyuan Hua & Junwe, 2022. "Bridging the gap between atomically thin semiconductors and metal leads," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    4. Seunguk Song & Aram Yoon & Sora Jang & Jason Lynch & Jihoon Yang & Juwon Han & Myeonggi Choe & Young Ho Jin & Cindy Yueli Chen & Yeryun Cheon & Jinsung Kwak & Changwook Jeong & Hyeonsik Cheong & Deep , 2023. "Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes," Nature Communications, Nature, vol. 14(1), pages 1-14, December.
    5. Lingan Kong & Ruixia Wu & Yang Chen & Ying Huangfu & Liting Liu & Wei Li & Donglin Lu & Quanyang Tao & Wenjing Song & Wanying Li & Zheyi Lu & Xiao Liu & Yunxin Li & Zhiwei Li & Wei Tong & Shuimei Ding, 2023. "Wafer-scale and universal van der Waals metal semiconductor contact," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    6. Xuanzhang Li & Yang Wei & Zhijie Wang & Ya Kong & Yipeng Su & Gaotian Lu & Zhen Mei & Yi Su & Guangqi Zhang & Jianhua Xiao & Liang Liang & Jia Li & Qunqing Li & Jin Zhang & Shoushan Fan & Yuegang Zhan, 2023. "One-dimensional semimetal contacts to two-dimensional semiconductors," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    7. Xiaodong Zhang & Chenxi Huang & Zeyu Li & Jun Fu & Jiaran Tian & Zhuping Ouyang & Yuliang Yang & Xiang Shao & Yulei Han & Zhenhua Qiao & Hualing Zeng, 2024. "Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    8. Lu Li & Qinqin Wang & Fanfan Wu & Qiaoling Xu & Jinpeng Tian & Zhiheng Huang & Qinghe Wang & Xuan Zhao & Qinghua Zhang & Qinkai Fan & Xiuzhen Li & Yalin Peng & Yangkun Zhang & Kunshan Ji & Aomiao Zhi , 2024. "Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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