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Robust single modified divacancy color centers in 4H-SiC under resonant excitation

Author

Listed:
  • Zhen-Xuan He

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Ji-Yang Zhou

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Qiang Li

    (ZJU-Hangzhou Global Scientific and Technological Innovation Center
    Zhejiang University)

  • Wu-Xi Lin

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Rui-Jian Liang

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Jun-Feng Wang

    (Sichuan University)

  • Xiao-Lei Wen

    (University of Science and Technology of China)

  • Zhi-He Hao

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Wei Liu

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Shuo Ren

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Hao Li

    (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences)

  • Li-Xing You

    (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences)

  • Rui-Jun Zhang

    (Xiamen University)

  • Feng Zhang

    (Xiamen University)

  • Jian-Shun Tang

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Jin-Shi Xu

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Chuan-Feng Li

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Guang-Can Guo

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

Abstract

Color centers in silicon carbide (SiC) offer exciting possibilities for quantum information processing. However, the challenge of ionization during optical manipulation leads to charge variations, hampering the efficacy of spin-photon interfaces. Recent research predicted that modified divacancy color centers can stabilize their charge states, resisting photoionization. This study presents a method for precisely creating single divacancy arrays in 4H-SiC using a focused helium ion beam. Photoluminescence tests reveal consistent emission with minimal linewidth fluctuations (∼50 MHz over 3 h). By measuring the ionization rate for different polytypes of divacancies, we found that the modified divacancies are more robust against resonant excitation. Furthermore, angle-resolved photoluminescence excitation spectra unveil two resonant-transition lines with orthogonal polarizations. Enhanced optical and spin characteristics were notably observed in these color centers compared to those generated through carbon-ion and shallow implantation methods, positioning modified divacancies as promising contenders for advancing quantum networking.

Suggested Citation

  • Zhen-Xuan He & Ji-Yang Zhou & Qiang Li & Wu-Xi Lin & Rui-Jian Liang & Jun-Feng Wang & Xiao-Lei Wen & Zhi-He Hao & Wei Liu & Shuo Ren & Hao Li & Li-Xing You & Rui-Jun Zhang & Feng Zhang & Jian-Shun Tan, 2024. "Robust single modified divacancy color centers in 4H-SiC under resonant excitation," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-53662-y
    DOI: 10.1038/s41467-024-53662-y
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    References listed on IDEAS

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