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Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Author

Listed:
  • F. Fuchs

    (Experimental Physics VI, Julius-Maximilian University of Würzburg)

  • B. Stender

    (Experimental Physics VI, Julius-Maximilian University of Würzburg)

  • M. Trupke

    (Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien)

  • D. Simin

    (Experimental Physics VI, Julius-Maximilian University of Würzburg)

  • J. Pflaum

    (Experimental Physics VI, Julius-Maximilian University of Würzburg
    Bavarian Center for Applied Energy Research (ZAE Bayern))

  • V. Dyakonov

    (Experimental Physics VI, Julius-Maximilian University of Würzburg
    Bavarian Center for Applied Energy Research (ZAE Bayern))

  • G. V. Astakhov

    (Experimental Physics VI, Julius-Maximilian University of Würzburg)

Abstract

Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

Suggested Citation

  • F. Fuchs & B. Stender & M. Trupke & D. Simin & J. Pflaum & V. Dyakonov & G. V. Astakhov, 2015. "Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide," Nature Communications, Nature, vol. 6(1), pages 1-7, November.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms8578
    DOI: 10.1038/ncomms8578
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    Cited by:

    1. Cunzhi Zhang & Francois Gygi & Giulia Galli, 2023. "Engineering the formation of spin-defects from first principles," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    2. Pasquale Cilibrizzi & Muhammad Junaid Arshad & Benedikt Tissot & Nguyen Tien Son & Ivan G. Ivanov & Thomas Astner & Philipp Koller & Misagh Ghezellou & Jawad Ul-Hassan & Daniel White & Christiaan Bekk, 2023. "Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    3. Michael Hollenbach & Nico Klingner & Nagesh S. Jagtap & Lothar Bischoff & Ciarán Fowley & Ulrich Kentsch & Gregor Hlawacek & Artur Erbe & Nikolay V. Abrosimov & Manfred Helm & Yonder Berencén & Georgy, 2022. "Wafer-scale nanofabrication of telecom single-photon emitters in silicon," Nature Communications, Nature, vol. 13(1), pages 1-7, December.

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