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Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment

Author

Listed:
  • Yan-Kai Tzeng

    (Stanford University)

  • Feng Ke

    (SLAC National Accelerator Laboratory
    Stanford University
    Yanshan University)

  • Chunjing Jia

    (SLAC National Accelerator Laboratory
    University of Florida)

  • Yayuan Liu

    (Stanford University)

  • Sulgiye Park

    (Stanford University)

  • Minkyung Han

    (Stanford University
    Stanford University)

  • Mungo Frost

    (SLAC National Accelerator Laboratory)

  • Xinxin Cai

    (University of Rochester)

  • Wendy L. Mao

    (SLAC National Accelerator Laboratory
    Stanford University)

  • Rodney C. Ewing

    (Stanford University)

  • Yi Cui

    (Stanford University)

  • Thomas P. Devereaux

    (SLAC National Accelerator Laboratory
    Stanford University)

  • Yu Lin

    (SLAC National Accelerator Laboratory)

  • Steven Chu

    (Stanford University
    Stanford University
    Stanford University)

Abstract

Silicon-vacancy (SiV) centers in diamond are emerging as promising quantum emitters in applications such as quantum communication and quantum information processing. Here, we demonstrate a sub-μs pulsed annealing treatment that dramatically increases the photoluminescence of SiV centers in diamond. Using a silane-functionalized adamantane precursor and a laser-heated diamond anvil cell, the temperature and energy conditions required to form SiV centers in diamond were mapped out via an optical thermometry system with an accuracy of ±50 K and a 1 μs temporal resolution. Annealing scheme studies reveal that pulsed annealing can obviously minimize the migration of SiV centers out of the diamond lattice, and a 2.5-fold increase in the number of emitting centers was achieved using a series of 200-ns pulses at a 50 kHz repetition rate via acousto-optic modulation. Our study provides a novel pulsed annealing treatment approach to improve the efficiency of the creation of SiV centers in diamond.

Suggested Citation

  • Yan-Kai Tzeng & Feng Ke & Chunjing Jia & Yayuan Liu & Sulgiye Park & Minkyung Han & Mungo Frost & Xinxin Cai & Wendy L. Mao & Rodney C. Ewing & Yi Cui & Thomas P. Devereaux & Yu Lin & Steven Chu, 2024. "Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-51523-2
    DOI: 10.1038/s41467-024-51523-2
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    References listed on IDEAS

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