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Excited-state spin-resonance spectroscopy of V $${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ B − defect centers in hexagonal boron nitride

Author

Listed:
  • Nikhil Mathur

    (Cornell University)

  • Arunabh Mukherjee

    (University of Rochester)

  • Xingyu Gao

    (Purdue University)

  • Jialun Luo

    (Cornell University)

  • Brendan A. McCullian

    (Cornell University)

  • Tongcang Li

    (Purdue University
    Purdue University)

  • A. Nick Vamivakas

    (University of Rochester
    University of Rochester
    University of Rochester
    University of Rochester)

  • Gregory D. Fuchs

    (Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

Abstract

The recently discovered spin-active boron vacancy (V $${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ B − ) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system from D3h to C2v. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing.

Suggested Citation

  • Nikhil Mathur & Arunabh Mukherjee & Xingyu Gao & Jialun Luo & Brendan A. McCullian & Tongcang Li & A. Nick Vamivakas & Gregory D. Fuchs, 2022. "Excited-state spin-resonance spectroscopy of V $${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ B − defect centers in hexagonal boron nitride," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-30772-z
    DOI: 10.1038/s41467-022-30772-z
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    Cited by:

    1. Xingyu Gao & Sumukh Vaidya & Saakshi Dikshit & Peng Ju & Kunhong Shen & Yuanbin Jin & Shixiong Zhang & Tongcang Li, 2024. "Nanotube spin defects for omnidirectional magnetic field sensing," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    2. Nai-Jie Guo & Song Li & Wei Liu & Yuan-Ze Yang & Xiao-Dong Zeng & Shang Yu & Yu Meng & Zhi-Peng Li & Zhao-An Wang & Lin-Ke Xie & Rong-Chun Ge & Jun-Feng Wang & Qiang Li & Jin-Shi Xu & Yi-Tao Wang & Ji, 2023. "Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature," Nature Communications, Nature, vol. 14(1), pages 1-8, December.

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