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Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

Author

Listed:
  • Artem Musiienko

    (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH)

  • Fengjiu Yang

    (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
    National Renewable Energy Laboratory)

  • Thomas William Gries

    (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
    University of Bielefeld)

  • Chiara Frasca

    (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
    University of Bielefeld)

  • Dennis Friedrich

    (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH)

  • Amran Al-Ashouri

    (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH)

  • Elifnaz Sağlamkaya

    (University of Potsdam)

  • Felix Lang

    (University of Potsdam)

  • Danny Kojda

    (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH)

  • Yi-Teng Huang

    (University of Cambridge
    University of Oxford)

  • Valerio Stacchini

    (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH)

  • Robert L. Z. Hoye

    (University of Oxford)

  • Mahshid Ahmadi

    (The University of Tennessee Knoxville)

  • Andrii Kanak

    (ETH Zürich
    Yuriy Fedkovych Chernivtsi National University)

  • Antonio Abate

    (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
    University of Bielefeld)

Abstract

The knowledge of minority and majority charge carrier properties enables controlling the performance of solar cells, transistors, detectors, sensors, and LEDs. Here, we developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusion coefficient and length, and quasi-Fermi level splitting. We demonstrate the implication of the constant light induced magneto transport for silicon and metal halide perovskite films. We resolve the transport properties of electrons and holes predicting the material’s effectiveness for solar cell application without making the full device. The accessibility of fourteen material parameters paves the way for in-depth exploration of causal mechanisms limiting the efficiency and functionality of material structures. To demonstrate broad applicability, we further characterized twelve materials with drift mobilities spanning from 10–3 to 103 cm2V–1s–1 and lifetimes varying between 10–9 and 10–3 seconds. The universality of our method its potential to advance optoelectronic devices in various technological fields.

Suggested Citation

  • Artem Musiienko & Fengjiu Yang & Thomas William Gries & Chiara Frasca & Dennis Friedrich & Amran Al-Ashouri & Elifnaz Sağlamkaya & Felix Lang & Danny Kojda & Yi-Teng Huang & Valerio Stacchini & Robert, 2024. "Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-023-44418-1
    DOI: 10.1038/s41467-023-44418-1
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