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Intervalence plasmons in boron-doped diamond

Author

Listed:
  • Souvik Bhattacharya

    (University of Illinois Urbana-Champaign)

  • Jonathan Boyd

    (Case Western Reserve University)

  • Sven Reichardt

    (University of Luxembourg)

  • Valentin Allard

    (Institut Fresnel)

  • Amir Hossein Talebi

    (University of Luxembourg)

  • Nicolò Maccaferri

    (Umeå University)

  • Olga Shenderova

    (Adamas Nanotechnologies)

  • Aude L. Lereu

    (Institut Fresnel)

  • Ludger Wirtz

    (University of Luxembourg)

  • Giuseppe Strangi

    (Case Western Reserve University
    University of Calabria)

  • R. Mohan Sankaran

    (University of Illinois Urbana-Champaign)

Abstract

Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low-energy excitations is provided by valence electron energy loss spectroscopy and near-field infrared spectroscopy. The measured spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Our calculations also reveal that the real part of the dielectric function exhibits a crossover characteristic of metallicity. These results suggest a new mechanism for inducing plasmon-like behavior in doped semiconductors, and the possibility of attaining such properties in diamond, a key emerging material for quantum information technologies.

Suggested Citation

  • Souvik Bhattacharya & Jonathan Boyd & Sven Reichardt & Valentin Allard & Amir Hossein Talebi & Nicolò Maccaferri & Olga Shenderova & Aude L. Lereu & Ludger Wirtz & Giuseppe Strangi & R. Mohan Sankaran, 2025. "Intervalence plasmons in boron-doped diamond," Nature Communications, Nature, vol. 16(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-024-55353-0
    DOI: 10.1038/s41467-024-55353-0
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