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Carrier-resolved photo-Hall effect

Author

Listed:
  • Oki Gunawan

    (IBM T. J. Watson Research Center)

  • Seong Ryul Pae

    (Korea Advanced Institute of Science and Technology)

  • Douglas M. Bishop

    (IBM T. J. Watson Research Center)

  • Yudistira Virgus

    (IBM T. J. Watson Research Center)

  • Jun Hong Noh

    (Korea Research Institute of Chemical Technology
    Korea University)

  • Nam Joong Jeon

    (Korea Research Institute of Chemical Technology)

  • Yun Seog Lee

    (IBM T. J. Watson Research Center
    Seoul National University)

  • Xiaoyan Shao

    (IBM T. J. Watson Research Center)

  • Teodor Todorov

    (IBM T. J. Watson Research Center)

  • David B. Mitzi

    (Duke University
    Duke University)

  • Byungha Shin

    (Korea Advanced Institute of Science and Technology)

Abstract

The fundamental parameters of majority and minority charge carriers—including their type, density and mobility—govern the performance of semiconductor devices yet can be difficult to measure. Although the Hall measurement technique is currently the standard for extracting the properties of majority carriers, those of minority carriers have typically only been accessible through the application of separate techniques. Here we demonstrate an extension to the classic Hall measurement—a carrier-resolved photo-Hall technique—that enables us to simultaneously obtain the mobility and concentration of both majority and minority carriers, as well as the recombination lifetime, diffusion length and recombination coefficient. This is enabled by advances in a.c.-field Hall measurement using a rotating parallel dipole line system and an equation, ΔμH = d(σ2H)/dσ, which relates the hole–electron Hall mobility difference (ΔμH), the conductivity (σ) and the Hall coefficient (H). We apply this technique to various solar absorbers—including high-performance lead-iodide-based perovskites—and demonstrate simultaneous access to majority and minority carrier parameters and map the results against varying light intensities. This information, which is buried within the photo-Hall measurement1,2, had remained inaccessible since the original discovery of the Hall effect in 18793. The simultaneous measurement of majority and minority carriers should have broad applications, including in photovoltaics and other optoelectronic devices.

Suggested Citation

  • Oki Gunawan & Seong Ryul Pae & Douglas M. Bishop & Yudistira Virgus & Jun Hong Noh & Nam Joong Jeon & Yun Seog Lee & Xiaoyan Shao & Teodor Todorov & David B. Mitzi & Byungha Shin, 2019. "Carrier-resolved photo-Hall effect," Nature, Nature, vol. 575(7781), pages 151-155, November.
  • Handle: RePEc:nat:nature:v:575:y:2019:i:7781:d:10.1038_s41586-019-1632-2
    DOI: 10.1038/s41586-019-1632-2
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    Cited by:

    1. Artem Musiienko & Fengjiu Yang & Thomas William Gries & Chiara Frasca & Dennis Friedrich & Amran Al-Ashouri & Elifnaz Sağlamkaya & Felix Lang & Danny Kojda & Yi-Teng Huang & Valerio Stacchini & Robert, 2024. "Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport," Nature Communications, Nature, vol. 15(1), pages 1-11, December.

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