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High-performance hysteresis-free perovskite transistors through anion engineering

Author

Listed:
  • Huihui Zhu

    (Pohang University of Science and Technology)

  • Ao Liu

    (Pohang University of Science and Technology)

  • Kyu In Shim

    (Pohang University of Science and Technology)

  • Haksoon Jung

    (Pohang University of Science and Technology)

  • Taoyu Zou

    (Pohang University of Science and Technology)

  • Youjin Reo

    (Pohang University of Science and Technology)

  • Hyunjun Kim

    (Pohang University of Science and Technology)

  • Jeong Woo Han

    (Pohang University of Science and Technology)

  • Yimu Chen

    (Harbin Institute of Technology)

  • Hye Yong Chu

    (Samsung Display Inc.)

  • Jun Hyung Lim

    (Samsung Display Inc.)

  • Hyung-Jun Kim

    (Samsung Display Inc.)

  • Sai Bai

    (University of Electronic Science and Technology of China
    Linköping University)

  • Yong-Young Noh

    (Pohang University of Science and Technology)

Abstract

Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm2 V−1 s−1, current on/off ratios exceeding 107, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.

Suggested Citation

  • Huihui Zhu & Ao Liu & Kyu In Shim & Haksoon Jung & Taoyu Zou & Youjin Reo & Hyunjun Kim & Jeong Woo Han & Yimu Chen & Hye Yong Chu & Jun Hyung Lim & Hyung-Jun Kim & Sai Bai & Yong-Young Noh, 2022. "High-performance hysteresis-free perovskite transistors through anion engineering," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-29434-x
    DOI: 10.1038/s41467-022-29434-x
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    References listed on IDEAS

    as
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