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Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches

Author

Listed:
  • Sellier, J.M.
  • Amoroso, S.M.
  • Nedjalkov, M.
  • Selberherr, S.
  • Asenov, A.
  • Dimov, I.

Abstract

We present a numerical study of the evolution of a wave packet in a nanoscale MOSFET featuring an ‘atomistic’ channel doping. Our two-dimensional Monte Carlo Wigner simulation results are compared against classical Boltzmann simulation results. We show that the quantum effects due to the presence of a scattering center are manifestly non-local affecting the wave propagation much farther than the geometric limit of the center. In particular the part of the channel close to the oxide interface remains blocked for transport, in contrast to the behavior predicted by classical Boltzmann propagation.

Suggested Citation

  • Sellier, J.M. & Amoroso, S.M. & Nedjalkov, M. & Selberherr, S. & Asenov, A. & Dimov, I., 2014. "Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 398(C), pages 194-198.
    • Handle: RePEc:eee:phsmap:v:398:y:2014:i:c:p:194-198
    DOI: 10.1016/j.physa.2013.12.045
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    References listed on IDEAS

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    1. Takahiro Shinada & Shintaro Okamoto & Takahiro Kobayashi & Iwao Ohdomari, 2005. "Enhancing semiconductor device performance using ordered dopant arrays," Nature, Nature, vol. 437(7062), pages 1128-1131, October.
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    Cited by:

    1. Sellier, J.M. & Dimov, I., 2015. "Toward solotronics design in the Wigner formalism," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 417(C), pages 287-296.

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