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Doping semiconductor nanocrystals

Author

Listed:
  • Steven C. Erwin

    (Naval Research Laboratory)

  • Lijun Zu

    (University of Minnesota)

  • Michael I. Haftel

    (Naval Research Laboratory)

  • Alexander L. Efros

    (Naval Research Laboratory)

  • Thomas A. Kennedy

    (Naval Research Laboratory)

  • David J. Norris

    (University of Minnesota)

Abstract

Doping the undopable The properties of bulk semiconductors can be modified by doping, the intentional incorporation of impurities. The same method applied to semiconductor nanocrystals has had only limited success. Now a microscopic explanation of how dopants are incorporated into growing semiconductor nanocrystals provides pointers as to how these problems might be overcome. Doping efficiency depends on the initial adsorption of impurities on the surface of the crystal, and by close attention to growth conditions, namely surface morphology, crystal shape and surfactants, ‘undopable’ nanocrystals such as CdSe may soon become ‘dopable’ for use in applications such as solar cells and spintronics.

Suggested Citation

  • Steven C. Erwin & Lijun Zu & Michael I. Haftel & Alexander L. Efros & Thomas A. Kennedy & David J. Norris, 2005. "Doping semiconductor nanocrystals," Nature, Nature, vol. 436(7047), pages 91-94, July.
    • Handle: RePEc:nat:nature:v:436:y:2005:i:7047:d:10.1038_nature03832
    DOI: 10.1038/nature03832
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    Cited by:

    1. Dutta, Subhajit & Chatterjee, Somenath & Mallem, Kumar & Cho, Young Hyun & Yi, Junsin, 2019. "Control of size and distribution of silicon quantum dots in silicon dielectrics for solar cell application: A review," Renewable Energy, Elsevier, vol. 144(C), pages 2-14.

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