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Enhancing semiconductor device performance using ordered dopant arrays

Author

Listed:
  • Takahiro Shinada

    (Consolidated Research Institute for Advanced Science and Medical Care (ASMeW))

  • Shintaro Okamoto

    (Waseda University)

  • Takahiro Kobayashi

    (Waseda University)

  • Iwao Ohdomari

    (Consolidated Research Institute for Advanced Science and Medical Care (ASMeW)
    Waseda University)

Abstract

Impure thoughts For semiconductors to work properly, it is necessary to improve their electrical properties by adding small amounts of impurities, such as boron, to the semiconducting material, a process called doping. Until now it has been sufficient to introduce dopant atoms randomly. But as semiconductor devices continue to shrink, they will soon reach a size where fluctuations in dopant atom numbers will begin to influence electrical characteristics: dopant distribution can no longer be assumed to be homogeneous if the distance randomly separating these atoms is on a similar scale to the device itself. Shinada et al. have investigated the role of dopant disorder, using a recently developed single-ion implantation technique to implant dopant ions one-by-one into a fine semiconductor region. The results highlight the improvements in device performance that should be achievable through atomic-scale control of the doping process, and may even enhance the prospects for realizing silicon-based solid-state quantum computers.

Suggested Citation

  • Takahiro Shinada & Shintaro Okamoto & Takahiro Kobayashi & Iwao Ohdomari, 2005. "Enhancing semiconductor device performance using ordered dopant arrays," Nature, Nature, vol. 437(7062), pages 1128-1131, October.
    • Handle: RePEc:nat:nature:v:437:y:2005:i:7062:d:10.1038_nature04086
    DOI: 10.1038/nature04086
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    Cited by:

    1. Sellier, J.M. & Dimov, I., 2014. "A Wigner approach to the study of wave packets in ordered and disordered arrays of dopants," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 406(C), pages 185-190.
    2. Sellier, J.M. & Amoroso, S.M. & Nedjalkov, M. & Selberherr, S. & Asenov, A. & Dimov, I., 2014. "Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 398(C), pages 194-198.

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