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Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Author

Listed:
  • Brian Paquelet Wuetz

    (Delft University of Technology)

  • Merritt P. Losert

    (University of Wisconsin-Madison)

  • Sebastian Koelling

    (École Polytechnique de Montréal)

  • Lucas E. A. Stehouwer

    (Delft University of Technology)

  • Anne-Marije J. Zwerver

    (Delft University of Technology)

  • Stephan G. J. Philips

    (Delft University of Technology)

  • Mateusz T. Mądzik

    (Delft University of Technology)

  • Xiao Xue

    (Delft University of Technology)

  • Guoji Zheng

    (Delft University of Technology)

  • Mario Lodari

    (Delft University of Technology)

  • Sergey V. Amitonov

    (Delft University of Technology)

  • Nodar Samkharadze

    (QuTech and Netherlands Organisation for Applied Scientific Research (TNO))

  • Amir Sammak

    (QuTech and Netherlands Organisation for Applied Scientific Research (TNO))

  • Lieven M. K. Vandersypen

    (Delft University of Technology)

  • Rajib Rahman

    (University of New South Wales)

  • Susan N. Coppersmith

    (University of New South Wales)

  • Oussama Moutanabbir

    (École Polytechnique de Montréal)

  • Mark Friesen

    (University of Wisconsin-Madison)

  • Giordano Scappucci

    (Delft University of Technology)

Abstract

Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting.

Suggested Citation

  • Brian Paquelet Wuetz & Merritt P. Losert & Sebastian Koelling & Lucas E. A. Stehouwer & Anne-Marije J. Zwerver & Stephan G. J. Philips & Mateusz T. Mądzik & Xiao Xue & Guoji Zheng & Mario Lodari & Ser, 2022. "Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-35458-0
    DOI: 10.1038/s41467-022-35458-0
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    References listed on IDEAS

    as
    1. Akito Noiri & Kenta Takeda & Takashi Nakajima & Takashi Kobayashi & Amir Sammak & Giordano Scappucci & Seigo Tarucha, 2022. "Fast universal quantum gate above the fault-tolerance threshold in silicon," Nature, Nature, vol. 601(7893), pages 338-342, January.
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