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Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths

Author

Listed:
  • Yeonghun Lee

    (The University of Texas at Dallas
    Incheon National University)

  • Yaoqiao Hu

    (The University of Texas at Dallas)

  • Xiuyao Lang

    (The University of Texas at Dallas)

  • Dongwook Kim

    (The University of Texas at Dallas)

  • Kejun Li

    (University of California)

  • Yuan Ping

    (University of California)

  • Kai-Mei C. Fu

    (University of Washington
    University of Washington)

  • Kyeongjae Cho

    (The University of Texas at Dallas)

Abstract

Solid state quantum defects are promising candidates for scalable quantum information systems which can be seamlessly integrated with the conventional semiconductor electronic devices within the 3D monolithically integrated hybrid classical-quantum devices. Diamond nitrogen-vacancy (NV) center defects are the representative examples, but the controlled positioning of an NV center within bulk diamond is an outstanding challenge. Furthermore, quantum defect properties may not be easily tuned for bulk crystalline quantum defects. In comparison, 2D semiconductors, such as transition metal dichalcogenides (TMDs), are promising solid platform to host a quantum defect with tunable properties and a possibility of position control. Here, we computationally discover a promising defect family for spin qubit realization in 2D TMDs. The defects consist of transition metal atoms substituted at chalcogen sites with desirable spin-triplet ground state, zero-field splitting in the tens of GHz, and strong zero-phonon coupling to optical transitions in the highly desirable telecom band.

Suggested Citation

  • Yeonghun Lee & Yaoqiao Hu & Xiuyao Lang & Dongwook Kim & Kejun Li & Yuan Ping & Kai-Mei C. Fu & Kyeongjae Cho, 2022. "Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths," Nature Communications, Nature, vol. 13(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-35048-0
    DOI: 10.1038/s41467-022-35048-0
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    2. Ruotian Gong & Xinyi Du & Eli Janzen & Vincent Liu & Zhongyuan Liu & Guanghui He & Bingtian Ye & Tongcang Li & Norman Y. Yao & James H. Edgar & Erik A. Henriksen & Chong Zu, 2024. "Isotope engineering for spin defects in van der Waals materials," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
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