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Reducing charge noise in quantum dots by using thin silicon quantum wells

Author

Listed:
  • Brian Paquelet Wuetz

    (Delft University of Technology)

  • Davide Degli Esposti

    (Delft University of Technology)

  • Anne-Marije J. Zwerver

    (Delft University of Technology)

  • Sergey V. Amitonov

    (Delft University of Technology
    QuTech and Netherlands Organisation for Applied Scientific Research (TNO))

  • Marc Botifoll

    (Campus UAB)

  • Jordi Arbiol

    (Campus UAB
    ICREA)

  • Amir Sammak

    (QuTech and Netherlands Organisation for Applied Scientific Research (TNO))

  • Lieven M. K. Vandersypen

    (Delft University of Technology)

  • Maximilian Russ

    (Delft University of Technology)

  • Giordano Scappucci

    (Delft University of Technology)

Abstract

Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a 28Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick 28Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29 ± 0.02 μeV/Hz½ at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to CZ-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system.

Suggested Citation

  • Brian Paquelet Wuetz & Davide Degli Esposti & Anne-Marije J. Zwerver & Sergey V. Amitonov & Marc Botifoll & Jordi Arbiol & Amir Sammak & Lieven M. K. Vandersypen & Maximilian Russ & Giordano Scappucci, 2023. "Reducing charge noise in quantum dots by using thin silicon quantum wells," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-36951-w
    DOI: 10.1038/s41467-023-36951-w
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    References listed on IDEAS

    as
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