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Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires

Author

Listed:
  • Fengjing Liu

    (Shandong University)

  • Xinming Zhuang

    (Shandong University)

  • Mingxu Wang

    (Shandong University)

  • Dongqing Qi

    (Shandong University)

  • Shengpan Dong

    (Southeast University)

  • SenPo Yip

    (Kyushu University)

  • Yanxue Yin

    (Shandong University)

  • Jie Zhang

    (Shandong University)

  • Zixu Sa

    (Shandong University)

  • Kepeng Song

    (Shandong University)

  • Longbing He

    (Southeast University)

  • Yang Tan

    (Shandong University)

  • You Meng

    (City University of Hong Kong)

  • Johnny C. Ho

    (Kyushu University
    City University of Hong Kong)

  • Lei Liao

    (Hunan University)

  • Feng Chen

    (Shandong University)

  • Zai-xing Yang

    (Shandong University)

Abstract

Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics.

Suggested Citation

  • Fengjing Liu & Xinming Zhuang & Mingxu Wang & Dongqing Qi & Shengpan Dong & SenPo Yip & Yanxue Yin & Jie Zhang & Zixu Sa & Kepeng Song & Longbing He & Yang Tan & You Meng & Johnny C. Ho & Lei Liao & F, 2023. "Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-43323-x
    DOI: 10.1038/s41467-023-43323-x
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