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High electron mobility in strained GaAs nanowires

Author

Listed:
  • Leila Balaghi

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
    Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden)

  • Si Shan

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Ivan Fotev

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
    Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden)

  • Finn Moebus

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Rakesh Rana

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Tommaso Venanzi

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
    Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden)

  • René Hübner

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Thomas Mikolajick

    (Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden
    NaMLab gGmbH)

  • Harald Schneider

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Manfred Helm

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
    Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden)

  • Alexej Pashkin

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Emmanouil Dimakis

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

Abstract

Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30–50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology.

Suggested Citation

  • Leila Balaghi & Si Shan & Ivan Fotev & Finn Moebus & Rakesh Rana & Tommaso Venanzi & René Hübner & Thomas Mikolajick & Harald Schneider & Manfred Helm & Alexej Pashkin & Emmanouil Dimakis, 2021. "High electron mobility in strained GaAs nanowires," Nature Communications, Nature, vol. 12(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-27006-z
    DOI: 10.1038/s41467-021-27006-z
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    References listed on IDEAS

    as
    1. Leila Balaghi & Genziana Bussone & Raphael Grifone & René Hübner & Jörg Grenzer & Mahdi Ghorbani-Asl & Arkady V. Krasheninnikov & Harald Schneider & Manfred Helm & Emmanouil Dimakis, 2019. "Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch," Nature Communications, Nature, vol. 10(1), pages 1-10, December.
    2. Katsuhiro Tomioka & Masatoshi Yoshimura & Takashi Fukui, 2012. "A III–V nanowire channel on silicon for high-performance vertical transistors," Nature, Nature, vol. 488(7410), pages 189-192, August.
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