IDEAS home Printed from https://ideas.repec.org/a/nat/natcom/v12y2021i1d10.1038_s41467-021-27006-z.html
   My bibliography  Save this article

High electron mobility in strained GaAs nanowires

Author

Listed:
  • Leila Balaghi

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
    Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden)

  • Si Shan

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Ivan Fotev

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
    Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden)

  • Finn Moebus

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Rakesh Rana

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Tommaso Venanzi

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
    Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden)

  • René Hübner

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Thomas Mikolajick

    (Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden
    NaMLab gGmbH)

  • Harald Schneider

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Manfred Helm

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
    Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden)

  • Alexej Pashkin

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Emmanouil Dimakis

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

Abstract

Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30–50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology.

Suggested Citation

  • Leila Balaghi & Si Shan & Ivan Fotev & Finn Moebus & Rakesh Rana & Tommaso Venanzi & René Hübner & Thomas Mikolajick & Harald Schneider & Manfred Helm & Alexej Pashkin & Emmanouil Dimakis, 2021. "High electron mobility in strained GaAs nanowires," Nature Communications, Nature, vol. 12(1), pages 1-11, December.
  • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-27006-z
    DOI: 10.1038/s41467-021-27006-z
    as

    Download full text from publisher

    File URL: https://www.nature.com/articles/s41467-021-27006-z
    File Function: Abstract
    Download Restriction: no

    File URL: https://libkey.io/10.1038/s41467-021-27006-z?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    References listed on IDEAS

    as
    1. Leila Balaghi & Genziana Bussone & Raphael Grifone & René Hübner & Jörg Grenzer & Mahdi Ghorbani-Asl & Arkady V. Krasheninnikov & Harald Schneider & Manfred Helm & Emmanouil Dimakis, 2019. "Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch," Nature Communications, Nature, vol. 10(1), pages 1-10, December.
    2. Katsuhiro Tomioka & Masatoshi Yoshimura & Takashi Fukui, 2012. "A III–V nanowire channel on silicon for high-performance vertical transistors," Nature, Nature, vol. 488(7410), pages 189-192, August.
    Full references (including those not matched with items on IDEAS)

    Most related items

    These are the items that most often cite the same works as this one and are cited by the same works as this one.
    1. Pengyan Wen & Preksha Tiwari & Svenja Mauthe & Heinz Schmid & Marilyne Sousa & Markus Scherrer & Michael Baumann & Bertold Ian Bitachon & Juerg Leuthold & Bernd Gotsmann & Kirsten E. Moselund, 2022. "Waveguide coupled III-V photodiodes monolithically integrated on Si," Nature Communications, Nature, vol. 13(1), pages 1-11, December.
    2. Fengjing Liu & Xinming Zhuang & Mingxu Wang & Dongqing Qi & Shengpan Dong & SenPo Yip & Yanxue Yin & Jie Zhang & Zixu Sa & Kepeng Song & Longbing He & Yang Tan & You Meng & Johnny C. Ho & Lei Liao & F, 2023. "Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    3. Sung Bum Kang & Rahul Sharma & Minhyeok Jo & Su In Kim & Jeongwoo Hwang & Sang Hyuk Won & Jae Cheol Shin & Kyoung Jin Choi, 2022. "Catalysis-Free Growth of III-V Core-Shell Nanowires on p -Si for Efficient Heterojunction Solar Cells with Optimized Window Layer," Energies, MDPI, vol. 15(5), pages 1-10, February.
    4. Yiwen Zhang & Baoming Wang & Changxu Miao & Haozhi Chai & Wei Hong & Frances M. Ross & Rui-Tao Wen, 2024. "Controlled formation of three-dimensional cavities during lateral epitaxial growth," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    5. Dāgs Olšteins & Gunjan Nagda & Damon J. Carrad & Daria V. Beznasyuk & Christian E. N. Petersen & Sara Martí-Sánchez & Jordi Arbiol & Thomas S. Jespersen, 2023. "Cryogenic multiplexing using selective area grown nanowires," Nature Communications, Nature, vol. 14(1), pages 1-7, December.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-27006-z. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    If CitEc recognized a bibliographic reference but did not link an item in RePEc to it, you can help with this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.nature.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.