IDEAS home Printed from https://ideas.repec.org/a/nat/natcom/v10y2019i1d10.1038_s41467-019-10654-7.html
   My bibliography  Save this article

Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

Author

Listed:
  • Leila Balaghi

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
    Technische Universität Dresden)

  • Genziana Bussone

    (PETRA III, Deutsches Elektronen-Synchrotron (DESY))

  • Raphael Grifone

    (PETRA III, Deutsches Elektronen-Synchrotron (DESY))

  • René Hübner

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Jörg Grenzer

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Mahdi Ghorbani-Asl

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Arkady V. Krasheninnikov

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Harald Schneider

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

  • Manfred Helm

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
    Technische Universität Dresden)

  • Emmanouil Dimakis

    (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf)

Abstract

The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium arsenide or indium aluminium arsenide shells. Specifically, we demonstrate that the gallium arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.

Suggested Citation

  • Leila Balaghi & Genziana Bussone & Raphael Grifone & René Hübner & Jörg Grenzer & Mahdi Ghorbani-Asl & Arkady V. Krasheninnikov & Harald Schneider & Manfred Helm & Emmanouil Dimakis, 2019. "Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch," Nature Communications, Nature, vol. 10(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-10654-7
    DOI: 10.1038/s41467-019-10654-7
    as

    Download full text from publisher

    File URL: https://www.nature.com/articles/s41467-019-10654-7
    File Function: Abstract
    Download Restriction: no
    File URL: https://libkey.io/10.1038/s41467-019-10654-7?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    Citations

    Citations are extracted by the CitEc Project, subscribe to its RSS feed for this item.
    as


    Cited by:

    1. Fengjing Liu & Xinming Zhuang & Mingxu Wang & Dongqing Qi & Shengpan Dong & SenPo Yip & Yanxue Yin & Jie Zhang & Zixu Sa & Kepeng Song & Longbing He & Yang Tan & You Meng & Johnny C. Ho & Lei Liao & F, 2023. "Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Leila Balaghi & Si Shan & Ivan Fotev & Finn Moebus & Rakesh Rana & Tommaso Venanzi & René Hübner & Thomas Mikolajick & Harald Schneider & Manfred Helm & Alexej Pashkin & Emmanouil Dimakis, 2021. "High electron mobility in strained GaAs nanowires," Nature Communications, Nature, vol. 12(1), pages 1-11, December.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-10654-7. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.nature.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.