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An ultrasensitive molybdenum-based double-heterojunction phototransistor

Author

Listed:
  • Shun Feng

    (Chinese Academy of Sciences
    ShanghaiTech University)

  • Chi Liu

    (Chinese Academy of Sciences)

  • Qianbing Zhu

    (Chinese Academy of Sciences
    University of Science and Technology of China)

  • Xin Su

    (Nanjing University)

  • Wangwang Qian

    (Chinese Academy of Sciences
    University of Science and Technology of China)

  • Yun Sun

    (Chinese Academy of Sciences)

  • Chengxu Wang

    (Chinese Academy of Sciences
    University of Science and Technology of China)

  • Bo Li

    (Chinese Academy of Sciences
    University of Science and Technology of China)

  • Maolin Chen

    (Chinese Academy of Sciences
    University of Science and Technology of China)

  • Long Chen

    (Chinese Academy of Sciences)

  • Wei Chen

    (Chinese Academy of Sciences
    University of Science and Technology of China)

  • Lili Zhang

    (Chinese Academy of Sciences)

  • Chao Zhen

    (Chinese Academy of Sciences)

  • Feijiu Wang

    (Henan University)

  • Wencai Ren

    (Chinese Academy of Sciences
    University of Science and Technology of China)

  • Lichang Yin

    (Chinese Academy of Sciences
    University of Science and Technology of China)

  • Xiaomu Wang

    (Nanjing University)

  • Hui-Ming Cheng

    (Chinese Academy of Sciences
    University of Science and Technology of China
    Tsinghua University)

  • Dong-Ming Sun

    (Chinese Academy of Sciences
    University of Science and Technology of China)

Abstract

Two-dimensional (2D) materials are promising for next-generation photo detection because of their exceptional properties such as a strong interaction with light, electronic and optical properties that depend on the number of layers, and the ability to form hybrid structures. However, the intrinsic detection ability of 2D material-based photodetectors is low due to their atomic thickness. Photogating is widely used to improve the responsivity of devices, which usually generates large noise current, resulting in limited detectivity. Here, we report a molybdenum-based phototransistor with MoS2 channel and α-MoO3-x contact electrodes. The device works in a photo-induced barrier-lowering (PIBL) mechanism and its double heterojunctions between the channel and the electrodes can provide positive feedback to each other. As a result, a detectivity of 9.8 × 1016 cm Hz1/2 W−1 has been achieved. The proposed double heterojunction PIBL mechanism adds to the techniques available for the fabrication of 2D material-based phototransistors with an ultrahigh photosensitivity.

Suggested Citation

  • Shun Feng & Chi Liu & Qianbing Zhu & Xin Su & Wangwang Qian & Yun Sun & Chengxu Wang & Bo Li & Maolin Chen & Long Chen & Wei Chen & Lili Zhang & Chao Zhen & Feijiu Wang & Wencai Ren & Lichang Yin & Xi, 2021. "An ultrasensitive molybdenum-based double-heterojunction phototransistor," Nature Communications, Nature, vol. 12(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-24397-x
    DOI: 10.1038/s41467-021-24397-x
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    Cited by:

    1. Fengjing Liu & Xinming Zhuang & Mingxu Wang & Dongqing Qi & Shengpan Dong & SenPo Yip & Yanxue Yin & Jie Zhang & Zixu Sa & Kepeng Song & Longbing He & Yang Tan & You Meng & Johnny C. Ho & Lei Liao & F, 2023. "Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Mingxiu Liu & Jingxuan Wei & Liujian Qi & Junru An & Xingsi Liu & Yahui Li & Zhiming Shi & Dabing Li & Kostya S. Novoselov & Cheng-Wei Qiu & Shaojuan Li, 2024. "Photogating-assisted tunneling boosts the responsivity and speed of heterogeneous WSe2/Ta2NiSe5 photodetectors," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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