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Waveguide coupled III-V photodiodes monolithically integrated on Si

Author

Listed:
  • Pengyan Wen

    (IBM Research Europe – Zurich)

  • Preksha Tiwari

    (IBM Research Europe – Zurich)

  • Svenja Mauthe

    (IBM Research Europe – Zurich)

  • Heinz Schmid

    (IBM Research Europe – Zurich)

  • Marilyne Sousa

    (IBM Research Europe – Zurich)

  • Markus Scherrer

    (IBM Research Europe – Zurich)

  • Michael Baumann

    (ETH Zürich, Institute of Electromagnetic Fields (IEF))

  • Bertold Ian Bitachon

    (ETH Zürich, Institute of Electromagnetic Fields (IEF))

  • Juerg Leuthold

    (ETH Zürich, Institute of Electromagnetic Fields (IEF))

  • Bernd Gotsmann

    (IBM Research Europe – Zurich)

  • Kirsten E. Moselund

    (IBM Research Europe – Zurich)

Abstract

The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at −1 V and a responsivity up to 0.2 A/W at −2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.

Suggested Citation

  • Pengyan Wen & Preksha Tiwari & Svenja Mauthe & Heinz Schmid & Marilyne Sousa & Markus Scherrer & Michael Baumann & Bertold Ian Bitachon & Juerg Leuthold & Bernd Gotsmann & Kirsten E. Moselund, 2022. "Waveguide coupled III-V photodiodes monolithically integrated on Si," Nature Communications, Nature, vol. 13(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-28502-6
    DOI: 10.1038/s41467-022-28502-6
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    References listed on IDEAS

    as
    1. Fabian Menges & Philipp Mensch & Heinz Schmid & Heike Riel & Andreas Stemmer & Bernd Gotsmann, 2016. "Temperature mapping of operating nanoscale devices by scanning probe thermometry," Nature Communications, Nature, vol. 7(1), pages 1-6, April.
    2. Katsuhiro Tomioka & Masatoshi Yoshimura & Takashi Fukui, 2012. "A III–V nanowire channel on silicon for high-performance vertical transistors," Nature, Nature, vol. 488(7410), pages 189-192, August.
    3. Roger Chen & Kar Wei Ng & Wai Son Ko & Devang Parekh & Fanglu Lu & Thai-Truong D. Tran & Kun Li & Connie Chang-Hasnain, 2014. "Nanophotonic integrated circuits from nanoresonators grown on silicon," Nature Communications, Nature, vol. 5(1), pages 1-10, September.
    4. Svenja Mauthe & Yannick Baumgartner & Marilyne Sousa & Qian Ding & Marta D. Rossell & Andreas Schenk & Lukas Czornomaz & Kirsten E. Moselund, 2020. "High-speed III-V nanowire photodetector monolithically integrated on Si," Nature Communications, Nature, vol. 11(1), pages 1-7, December.
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