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Ultrahigh drive current and large selectivity in GeS selector

Author

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  • Shujing Jia

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
    Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Huanglong Li

    (Tsinghua University
    Chinese Institute for Brain Research)

  • Tamihiro Gotoh

    (Graduate School of Science and Technology, Gunma University)

  • Christophe Longeaud

    (Group of Electrical Engineering of Paris, CNRS, Centrale Supelec, Paris Saclay and Sorbonne Universities, Plateau de Moulon)

  • Bin Zhang

    (Analytical and Testing Center of Chongqing University)

  • Juan Lyu

    (Tsinghua University)

  • Shilong Lv

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences)

  • Min Zhu

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences)

  • Zhitang Song

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences)

  • Qi Liu

    (Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences)

  • John Robertson

    (University of Cambridge)

  • Ming Liu

    (Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences)

Abstract

Selector devices are indispensable components of large-scale nonvolatile memory and neuromorphic array systems. Besides the conventional silicon transistor, two-terminal ovonic threshold switching device with much higher scalability is currently the most industrially favored selector technology. However, current ovonic threshold switching devices rely heavily on intricate control of material stoichiometry and generally suffer from toxic and complex dopants. Here, we report on a selector with a large drive current density of 34 MA cm−2 and a ~106 high nonlinearity, realized in an environment-friendly and earth-abundant sulfide binary semiconductor, GeS. Both experiments and first-principles calculations reveal Ge pyramid-dominated network and high density of near-valence band trap states in amorphous GeS. The high-drive current capacity is associated with the strong Ge-S covalency and the high nonlinearity could arise from the synergy of the mid-gap traps assisted electronic transition and local Ge-Ge chain growth as well as locally enhanced bond alignment under high electric field.

Suggested Citation

  • Shujing Jia & Huanglong Li & Tamihiro Gotoh & Christophe Longeaud & Bin Zhang & Juan Lyu & Shilong Lv & Min Zhu & Zhitang Song & Qi Liu & John Robertson & Ming Liu, 2020. "Ultrahigh drive current and large selectivity in GeS selector," Nature Communications, Nature, vol. 11(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-18382-z
    DOI: 10.1038/s41467-020-18382-z
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    Cited by:

    1. Renjie Wu & Rongchuan Gu & Tamihiro Gotoh & Zihao Zhao & Yuting Sun & Shujing Jia & Xiangshui Miao & Stephen R. Elliott & Min Zhu & Ming Xu & Zhitang Song, 2023. "The role of arsenic in the operation of sulfur-based electrical threshold switches," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Fengjing Liu & Xinming Zhuang & Mingxu Wang & Dongqing Qi & Shengpan Dong & SenPo Yip & Yanxue Yin & Jie Zhang & Zixu Sa & Kepeng Song & Longbing He & Yang Tan & You Meng & Johnny C. Ho & Lei Liao & F, 2023. "Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    3. Zhiyuan Li & Zhongshao Li & Wei Tang & Jiaping Yao & Zhipeng Dou & Junjie Gong & Yongfei Li & Beining Zhang & Yunxiao Dong & Jian Xia & Lin Sun & Peng Jiang & Xun Cao & Rui Yang & Xiangshui Miao & Ron, 2024. "Crossmodal sensory neurons based on high-performance flexible memristors for human-machine in-sensor computing system," Nature Communications, Nature, vol. 15(1), pages 1-11, December.

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