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Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Author

Listed:
  • Li Zhai

    (Nanjing University
    City University of Hong Kong
    City University of Hong Kong)

  • Sara T. Gebre

    (Emory University)

  • Bo Chen

    (City University of Hong Kong)

  • Dan Xu

    (Nanjing University)

  • Junze Chen

    (Sichuan University)

  • Zijian Li

    (City University of Hong Kong)

  • Yawei Liu

    (Emory University)

  • Hua Yang

    (City University of Hong Kong)

  • Chongyi Ling

    (City University of Hong Kong)

  • Yiyao Ge

    (City University of Hong Kong)

  • Wei Zhai

    (City University of Hong Kong)

  • Changsheng Chen

    (The Hong Kong Polytechnic University)

  • Lu Ma

    (Brookhaven National Laboratory)

  • Qinghua Zhang

    (Chinese Academy of Sciences)

  • Xuefei Li

    (Nanjing University)

  • Yujie Yan

    (Nanjing University)

  • Xinyu Huang

    (Nanjing University)

  • Lujiang Li

    (City University of Hong Kong)

  • Zhiqiang Guan

    (City University of Hong Kong)

  • Chen-Lei Tao

    (Nanjing University)

  • Zhiqi Huang

    (City University of Hong Kong)

  • Hongyi Wang

    (City University of Hong Kong)

  • Jinze Liang

    (City University of Hong Kong)

  • Ye Zhu

    (The Hong Kong Polytechnic University)

  • Chun-Sing Lee

    (City University of Hong Kong)

  • Peng Wang

    (Nanjing University
    University of Warwick)

  • Chunfeng Zhang

    (Nanjing University)

  • Lin Gu

    (Tsinghua University)

  • Yonghua Du

    (Brookhaven National Laboratory)

  • Tianquan Lian

    (Emory University)

  • Hua Zhang

    (City University of Hong Kong
    City University of Hong Kong
    City University of Hong Kong)

  • Xue-Jun Wu

    (Nanjing University)

Abstract

Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.

Suggested Citation

  • Li Zhai & Sara T. Gebre & Bo Chen & Dan Xu & Junze Chen & Zijian Li & Yawei Liu & Hua Yang & Chongyi Ling & Yiyao Ge & Wei Zhai & Changsheng Chen & Lu Ma & Qinghua Zhang & Xuefei Li & Yujie Yan & Xiny, 2023. "Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-38237-7
    DOI: 10.1038/s41467-023-38237-7
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    References listed on IDEAS

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    Cited by:

    1. Rishi Verma & Gunjan Sharma & Vivek Polshettiwar, 2024. "The paradox of thermal vs. non-thermal effects in plasmonic photocatalysis," Nature Communications, Nature, vol. 15(1), pages 1-45, December.

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