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An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications

Author

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  • Edemar O. Prado

    (Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil
    Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil)

  • Pedro C. Bolsi

    (Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil
    Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil)

  • Hamiltom C. Sartori

    (Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil)

  • José R. Pinheiro

    (Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil
    Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil)

Abstract

This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage of 400 V, power levels from 1 kW to 16 kW (1 A–40 A) and frequencies from 1 kHz to 500 kHz. A methodology for selecting power MOSFETs in power electronics applications is also presented.

Suggested Citation

  • Edemar O. Prado & Pedro C. Bolsi & Hamiltom C. Sartori & José R. Pinheiro, 2022. "An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications," Energies, MDPI, vol. 15(14), pages 1-17, July.
    • Handle: RePEc:gam:jeners:v:15:y:2022:i:14:p:5244-:d:866803
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    References listed on IDEAS

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    Cited by:

    1. Edemar O. Prado & Pedro C. Bolsi & Hamiltom C. Sartori & José R. Pinheiro, 2023. "Design of Uninterruptible Power Supply Inverters for Different Modulation Techniques Using Pareto Front for Cost and Efficiency Optimization," Energies, MDPI, vol. 16(3), pages 1-16, January.
    2. Sezer Aslan & Metin Ozturk & Nihan Altintas, 2023. "A Comparative Evaluation of Wide-Bandgap Semiconductors for High-Performance Domestic Induction Heating," Energies, MDPI, vol. 16(10), pages 1-16, May.
    3. Ersan Kabalci & Aydin Boyar, 2022. "Highly Efficient Interleaved Solar Converter Controlled with Extended Kalman Filter MPPT," Energies, MDPI, vol. 15(21), pages 1-24, October.
    4. Gang Lyu & Hamid Ali & Hongrui Tan & Lyuzhang Peng & Xiaofeng Ding, 2024. "Review on Short-Circuit Protection Methods for SiC MOSFETs," Energies, MDPI, vol. 17(17), pages 1-22, September.
    5. Salvatore Musumeci & Vincenzo Barba, 2023. "Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives," Energies, MDPI, vol. 16(9), pages 1-18, May.
    6. Nurbanu Catalbas & Ahmet Gungor Pakfiliz & Gokhan Soysal, 2024. "Multilevel Aircraft-Inverter Design Based on Wavelet PWM for More Electric Aircraft," Energies, MDPI, vol. 17(9), pages 1-23, April.

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