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Generalized Behavioral Modelling Methodology of Switch-Diode Cell for Power Loss Prediction in Electromagnetic Transient Simulation

Author

Listed:
  • Yanming Xu

    (Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg, MB R3T5V6, Canada)

  • Carl Ngai Man Ho

    (Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg, MB R3T5V6, Canada)

  • Avishek Ghosh

    (Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg, MB R3T5V6, Canada)

  • Dharshana Muthumuni

    (Manitoba Hydro International, Winnipeg, MB R3P1A3, Canada)

Abstract

Modern wide-bandgap (WBG) devices, such as silicon carbide (SiC) or gallium nitride (GaN) based devices, have emerged and been increasingly used in power electronics (PE) applications due to their superior switching feature. The power losses of these devices become the key of system efficiency improvement, especially for high-frequency applications. In this paper, a generalized behavioral model of a switch-diode cell (SDC) is proposed for power loss estimation in the electromagnetic transient simulation. The proposed model is developed based on the circuit level switching process analysis, which considers the effects of parasitics, the operating temperature, and the interaction of diode and switch. In addition, the transient waveforms of the SDC are simulated by the proposed model using dependent voltage and current sources with passive components. Besides, the approaches of obtaining model parameters from the datasheets are given and the modelling method is applicable to various semiconductors such Si insulated-gate bipolar transistor (IGBT), Si/SiC metal–oxide–semiconductor field-effect transistor (MOSFET), and GaN devices. Further, a multi-dimensional power loss table in a wide range of operating conditions can be obtained with fast speed and reasonable accuracy. The proposed approach is implemented in PSCAD/ Electromagnetic Transients including DC, EMTDC, (v4.6, Winnipeg, MB, Canada) and further verified by the hardware setups including different daughter boards for different devices.

Suggested Citation

  • Yanming Xu & Carl Ngai Man Ho & Avishek Ghosh & Dharshana Muthumuni, 2021. "Generalized Behavioral Modelling Methodology of Switch-Diode Cell for Power Loss Prediction in Electromagnetic Transient Simulation," Energies, MDPI, vol. 14(5), pages 1-23, March.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:5:p:1500-:d:513471
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    References listed on IDEAS

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    1. Jacek Rąbkowski & Hubert Skoneczny & Rafał Kopacz & Przemysław Trochimiuk & Grzegorz Wrona, 2020. "A Simple Method to Validate Power Loss in Medium Voltage SiC MOSFETs and Schottky Diodes Operating in a Three-Phase Inverter," Energies, MDPI, vol. 13(18), pages 1-18, September.
    2. Xiaobin Li & Hongbo Ma & Junhong Yi & Song Lu & Jianping Xu, 2020. "A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters," Energies, MDPI, vol. 13(16), pages 1-14, August.
    3. David Marroqui & Ausias Garrigós & Cristian Torres & Carlos Orts & Jose M. Blanes & Roberto Gutierrez, 2021. "Interleaved, Switched Inductor and High-Gain Wide Bandgap Based Boost Converter Proposal," Energies, MDPI, vol. 14(4), pages 1-11, February.
    4. Kwang-Hyung Cha & Chang-Tae Ju & Rae-Young Kim, 2020. "Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application," Energies, MDPI, vol. 13(20), pages 1-15, October.
    5. Dakang Yuan & Yiming Zhang & Xuhong Wang, 2021. "An Improved Analytical Model for Crosstalk of SiC MOSFET in a Bridge-Arm Configuration," Energies, MDPI, vol. 14(3), pages 1-30, January.
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    Keywords

    semiconductor; model; power loss;
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