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Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Author

Listed:
  • Salvatore Musumeci

    (Dipartimento Energia “Galileo Ferraris”, Politecnico di Torino, 10129 Torino, Italy)

  • Vincenzo Barba

    (Dipartimento Energia “Galileo Ferraris”, Politecnico di Torino, 10129 Torino, Italy)

Abstract

High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

Suggested Citation

  • Salvatore Musumeci & Vincenzo Barba, 2023. "Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives," Energies, MDPI, vol. 16(9), pages 1-18, May.
    • Handle: RePEc:gam:jeners:v:16:y:2023:i:9:p:3894-:d:1139421
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    References listed on IDEAS

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    1. Edemar O. Prado & Pedro C. Bolsi & Hamiltom C. Sartori & José R. Pinheiro, 2022. "An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications," Energies, MDPI, vol. 15(14), pages 1-17, July.
    2. Artem Ermolaev & Vladimir Erofeev & Aleksandr Plekhov & Dmitry Titov, 2022. "Magnetic Vibration in Induction Motor Caused by Supply Voltage Distortion," Energies, MDPI, vol. 15(24), pages 1-11, December.
    3. Salvatore Musumeci & Fabio Mandrile & Vincenzo Barba & Marco Palma, 2021. "Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review," Energies, MDPI, vol. 14(19), pages 1-30, October.
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    Citations

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    Cited by:

    1. Rajanand Patnaik Narasipuram & Subbarao Mopidevi, 2023. "A Novel Hybrid Control Strategy and Dynamic Performance Enhancement of a 3.3 kW GaN–HEMT-Based iL 2 C Resonant Full-Bridge DC–DC Power Converter Methodology for Electric Vehicle Charging Systems," Energies, MDPI, vol. 16(15), pages 1-22, August.
    2. Janusz Zarębski & Damian Bisewski, 2023. "The Modeling of GaN-FET Power Devices in SPICE," Energies, MDPI, vol. 16(22), pages 1-16, November.

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