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Analytical and Simulation Fair Comparison of Three Level Si IGBT Based NPC Topologies and Two Level SiC MOSFET Based Topology for High Speed Drives

Author

Listed:
  • Jelena Loncarski

    (Department of Electrical and Information Engineering, Politecnico di Bari, 70125 Bari, Italy
    Department of Engineering Sciences, Division of Electricity, Uppsala University, S-751 21 Uppsala, Sweden
    Current address: Department of Electrical and Information Engineering, Politecnico di Bari, Via E. Orabona, 4, 70125 Bari, Italy.
    These authors contributed equally to this work.)

  • Vito Giuseppe Monopoli

    (Department of Electrical and Information Engineering, Politecnico di Bari, 70125 Bari, Italy
    These authors contributed equally to this work.)

  • Riccardo Leuzzi

    (Department of Electrical and Information Engineering, Politecnico di Bari, 70125 Bari, Italy
    These authors contributed equally to this work.)

  • Leposava Ristic

    (Department of Electrical Engineering, University of Belgrade, 11120 Belgrade, Serbia
    These authors contributed equally to this work.)

  • Francesco Cupertino

    (Department of Electrical and Information Engineering, Politecnico di Bari, 70125 Bari, Italy
    These authors contributed equally to this work.)

Abstract

Wide bandgap (WBG) power devices such as silicon carbide (SiC) can viably supply high speed electrical drives, due to their capability to increase efficiency and reduce the size of the power converters. On the other hand, high frequency operation of the SiC devices emphasizes the effect of parasitics, which generates reflected wave transient overvoltage on motor terminals, reducing the life time and the reliability of electric drives. In this paper, a SiC metal-oxide-semiconductor field-effect transistor (MOSFET) based two level (2L) inverter is systematically studied and compared to the performance of Si insulated-gate bipolar transistor (IGBT) based three level (3L) neutral point clamped (NPC) inverter topologies, for high speed AC motor loads, in terms of efficiency, overvoltages, heat sink design, and cost. A fair comparison was introduced for the first time, having the same output voltage capabilities, output current total harmonic distortion (THD), and overvoltages for the three systems. The analysis indicated the convenience of using the SiC MOSFET based 2L inverter for lower output power. In the case of the maximum output power, the heat sink volume was found to be 20% higher for the 2L SiC based inverter when compared to 3L NPC topologies. Simulations were carried out by realistic dynamic models of power switch modules obtained from the manufacturer’s experimental tests and verified both in the LTspice and PLECS simulation packages.

Suggested Citation

  • Jelena Loncarski & Vito Giuseppe Monopoli & Riccardo Leuzzi & Leposava Ristic & Francesco Cupertino, 2019. "Analytical and Simulation Fair Comparison of Three Level Si IGBT Based NPC Topologies and Two Level SiC MOSFET Based Topology for High Speed Drives," Energies, MDPI, vol. 12(23), pages 1-16, November.
    • Handle: RePEc:gam:jeners:v:12:y:2019:i:23:p:4571-:d:292624
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    References listed on IDEAS

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    1. Luca Concari & Davide Barater & Andrea Toscani & Carlo Concari & Giovanni Franceschini & Giampaolo Buticchi & Marco Liserre & He Zhang, 2019. "Assessment of Efficiency and Reliability of Wide Band-Gap Based H8 Inverter in Electric Vehicle Applications," Energies, MDPI, vol. 12(10), pages 1-17, May.
    2. Xiaofeng Ding & Jiawei Cheng & Feida Chen, 2017. "Impact of Silicon Carbide Devices on the Powertrain Systems in Electric Vehicles," Energies, MDPI, vol. 10(4), pages 1-17, April.
    3. Haider Zaman & Xiaohua Wu & Xiancheng Zheng & Shahbaz Khan & Husan Ali, 2018. "Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter," Energies, MDPI, vol. 11(11), pages 1-19, November.
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    Cited by:

    1. Piotr Musznicki & Pawel B. Derkacz & Piotr J. Chrzan, 2021. "Wideband Modeling of DC-DC Buck Converter with GaN Transistors," Energies, MDPI, vol. 14(15), pages 1-12, July.
    2. Jelena Loncarski & Vito Giuseppe Monopoli & Giuseppe Leonardo Cascella & Francesco Cupertino, 2020. "SiC-MOSFET and Si-IGBT-Based dc-dc Interleaved Converters for EV Chargers: Approach for Efficiency Comparison with Minimum Switching Losses Based on Complete Parasitic Modeling," Energies, MDPI, vol. 13(17), pages 1-20, September.
    3. Fabio Corti & Alberto Reatti & Gabriele Maria Lozito & Ermanno Cardelli & Antonino Laudani, 2021. "Influence of Non-Linearity in Losses Estimation of Magnetic Components for DC-DC Converters," Energies, MDPI, vol. 14(20), pages 1-16, October.

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