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Analysis of the Usefulness Range of the Averaged Electrothermal Model of a Diode–Transistor Switch to Compute the Characteristics of the Boost Converter

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  • Paweł Górecki

    (Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland)

  • Krzysztof Górecki

    (Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland)

Abstract

In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state using an electrothermal averaged model of a diode–transistor switch containing an Insulated Gate Bipolar Transistor (IGBT) and a rapid switching diode. This model has a form of a subcircuit for SPICE (Simulation Program with Integrated Circuit Emphasis). The influence of such factors as the switching frequency of the transistor, the duty cycle of the signal controlling the transistor, the input voltage, and the output current of the boost converter on the accuracy of computing the converter output voltage and junction temperature of the IGBT and the diode were analysed. The correctness of the computation results was verified experimentally. Based on the performed computations and measurements, the usefulness range of the model under consideration was determined, and a method of solving selected problems limiting the accuracy of computations of the characteristics of this converter was proposed.

Suggested Citation

  • Paweł Górecki & Krzysztof Górecki, 2020. "Analysis of the Usefulness Range of the Averaged Electrothermal Model of a Diode–Transistor Switch to Compute the Characteristics of the Boost Converter," Energies, MDPI, vol. 14(1), pages 1-16, December.
    • Handle: RePEc:gam:jeners:v:14:y:2020:i:1:p:154-:d:470585
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    References listed on IDEAS

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    1. Jelena Loncarski & Vito Giuseppe Monopoli & Giuseppe Leonardo Cascella & Francesco Cupertino, 2020. "SiC-MOSFET and Si-IGBT-Based dc-dc Interleaved Converters for EV Chargers: Approach for Efficiency Comparison with Minimum Switching Losses Based on Complete Parasitic Modeling," Energies, MDPI, vol. 13(17), pages 1-20, September.
    2. Vincenzo d’Alessandro & Lorenzo Codecasa & Antonio Pio Catalano & Ciro Scognamillo, 2020. "Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC," Energies, MDPI, vol. 13(17), pages 1-27, September.
    3. Luca Concari & Davide Barater & Andrea Toscani & Carlo Concari & Giovanni Franceschini & Giampaolo Buticchi & Marco Liserre & He Zhang, 2019. "Assessment of Efficiency and Reliability of Wide Band-Gap Based H8 Inverter in Electric Vehicle Applications," Energies, MDPI, vol. 12(10), pages 1-17, May.
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