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Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

Author

Listed:
  • Haider Zaman

    (School of Automation, Northwestern Polytechnical University, Xi’an 710000, China)

  • Xiaohua Wu

    (School of Automation, Northwestern Polytechnical University, Xi’an 710000, China)

  • Xiancheng Zheng

    (School of Automation, Northwestern Polytechnical University, Xi’an 710000, China)

  • Shahbaz Khan

    (School of Automation, Northwestern Polytechnical University, Xi’an 710000, China)

  • Husan Ali

    (School of Automation, Northwestern Polytechnical University, Xi’an 710000, China)

Abstract

The silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density. However, at high switching frequency, the crosstalk phenomenon occurs when the gate voltage spike introduced by high dv/dt and voltage ringing forces false turn-on of SiC MOSFET which causes a crow-bar current thereby increasing switching losses. In order to increase the immunity against the crosstalk phenomenon in a half-bridge configuration, this paper presents a gate driver for SiC MOSFET capable of generating the negative turn-off voltage without using a negative power supply. In addition, the effect of parasitic inductances on the switching response is analyzed and an RC snubber is designed using high-frequency based circuit reduction technique to dampen the switching ringing. The performance of the proposed gate driver and the designed RC snubber is validated using simulation and experiment at the 1 MHz switching frequency. The results show that the proposed gate driver with RC snubber eliminates crosstalk by maintaining any spurious gate spike below the gate threshold voltage.

Suggested Citation

  • Haider Zaman & Xiaohua Wu & Xiancheng Zheng & Shahbaz Khan & Husan Ali, 2018. "Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter," Energies, MDPI, vol. 11(11), pages 1-19, November.
    • Handle: RePEc:gam:jeners:v:11:y:2018:i:11:p:3111-:d:181971
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    References listed on IDEAS

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    1. Hui Li & Xinglin Liao & Yaogang Hu & Zhangjian Huang & Kun Wang, 2017. "Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off," Energies, MDPI, vol. 10(10), pages 1-19, September.
    2. Hao Liu & Xianjin Huang & Fei Lin & Zhongping Yang, 2017. "Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device," Energies, MDPI, vol. 10(12), pages 1-20, December.
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    Citations

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    Cited by:

    1. Milad Moradpour & Paolo Pirino & Michele Losito & Wulf-Toke Franke & Amit Kumar & Gianluca Gatto, 2020. "Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles," Energies, MDPI, vol. 13(14), pages 1-14, July.
    2. HwaPyeong Park & DoKyoung Kim & SeungHo Baek & JeeHoon Jung, 2019. "Extension of Zero Voltage Switching Capability for CLLC Resonant Converter," Energies, MDPI, vol. 12(5), pages 1-14, March.
    3. Jelena Loncarski & Vito Giuseppe Monopoli & Riccardo Leuzzi & Leposava Ristic & Francesco Cupertino, 2019. "Analytical and Simulation Fair Comparison of Three Level Si IGBT Based NPC Topologies and Two Level SiC MOSFET Based Topology for High Speed Drives," Energies, MDPI, vol. 12(23), pages 1-16, November.
    4. Shan Yin & Yingzhe Wu & Yitao Liu & Xuewei Pan, 2019. "Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT," Energies, MDPI, vol. 12(23), pages 1-15, November.
    5. Dakang Yuan & Yiming Zhang & Xuhong Wang, 2021. "An Improved Analytical Model for Crosstalk of SiC MOSFET in a Bridge-Arm Configuration," Energies, MDPI, vol. 14(3), pages 1-30, January.
    6. Loreine Makki & Marc Anthony Mannah & Christophe Batard & Nicolas Ginot & Julien Weckbrodt, 2021. "Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs," Energies, MDPI, vol. 14(13), pages 1-16, June.

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