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Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

Author

Listed:
  • Hao Liu

    (School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China)

  • Xianjin Huang

    (School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China)

  • Fei Lin

    (School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China)

  • Zhongping Yang

    (School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China)

Abstract

Currently, the auxiliary converter in the auxiliary power supply system of a modern tram adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module commercially available from Cree, an auxiliary converter using all SiC devices is now possible. A SiC auxiliary converter prototype is developed during this study. The author(s) derive the loss calculation formula of the SiC auxiliary converter according to the system topology and principle and each part loss in this system can be calculated based on the device datasheet. Then, the static and dynamic characteristics of the SiC MOSFET module used in the system are tested, which aids in fully understanding the performance of the SiC devices and provides data support for the establishment of the PLECS loss simulation model. Additionally, according to the actual circuit parameters, the PLECS loss simulation model is set up. This simulation model can simulate the actual operating conditions of the auxiliary converter system and calculate the loss of each switching device. Finally, the loss of the SiC auxiliary converter prototype is measured and through comparison it is found that the loss calculation theory and PLECS loss simulation model is valuable. Furthermore, the thermal images of the system can prove the conclusion about loss distribution to some extent. Moreover, these two methods have the advantages of less variables and fast calculation for high power applications. The loss models may aid in optimizing the switching frequency and improving the efficiency of the system.

Suggested Citation

  • Hao Liu & Xianjin Huang & Fei Lin & Zhongping Yang, 2017. "Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device," Energies, MDPI, vol. 10(12), pages 1-20, December.
  • Handle: RePEc:gam:jeners:v:10:y:2017:i:12:p:2018-:d:121149
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    References listed on IDEAS

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    1. Xiaofeng Ding & Jiawei Cheng & Feida Chen, 2017. "Impact of Silicon Carbide Devices on the Powertrain Systems in Electric Vehicles," Energies, MDPI, vol. 10(4), pages 1-17, April.
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    Cited by:

    1. Maciej Kozłowski & Andrzej Czerepicki, 2023. "Quick Electrical Drive Selection Method for Bus Retrofitting," Sustainability, MDPI, vol. 15(13), pages 1-17, July.
    2. Haider Zaman & Xiaohua Wu & Xiancheng Zheng & Shahbaz Khan & Husan Ali, 2018. "Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter," Energies, MDPI, vol. 11(11), pages 1-19, November.
    3. Ivana Kovacevic-Badstuebner & Daniele Romano & Giulio Antonini & Jonas Ekman & Ulrike Grossner, 2021. "Broadband Circuit-Oriented Electromagnetic Modeling for Power Electronics: 3-D PEEC Solver vs. RLCG-Solver," Energies, MDPI, vol. 14(10), pages 1-16, May.

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