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An Improved Analytical Model for Crosstalk of SiC MOSFET in a Bridge-Arm Configuration

Author

Listed:
  • Dakang Yuan

    (Electromagnetic Theory and New Technology Laboratory, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China)

  • Yiming Zhang

    (Electromagnetic Theory and New Technology Laboratory, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China)

  • Xuhong Wang

    (Electromagnetic Theory and New Technology Laboratory, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China)

Abstract

SiC MOSFETs have an excellent characteristic of high switching speed, which can improve the efficiency and power density of converters significantly. However, the fast switching processes of SiC MOSFETs cause serious crosstalk problems in bridge-arm configurations, which restricts the devices’ performances. This paper presents a detailed and accurate improved crosstalk analytical model, which takes into account the nonlinear capacitances, the parasitic inductances, the reverse recovery characteristics of the anti-parallel diodes, and the nonlinear voltage switching and damping oscillation process. The novelty of the proposed model lies in the fact that under the condition of comprehensively considering all these non-ideal factors of the bridge-arm, the effects of multi-parasitic elements and multi-variables coupling to the crosstalk are hierarchically divided. The parasitic elements and their correlations are described in detail and the direct and indirect variables’ impacts are clearly traced. Thus, according to the different variables switching stages, the influence processes of these parasitic elements and variables can be integrated and a complete equivalent analytical model of the crosstalk process can be derived. The simulation and experiment platforms are established and a series of experimental verifications and comparisons prove that the model can replicate experimental measurements of crosstalk with good accuracy and detail.

Suggested Citation

  • Dakang Yuan & Yiming Zhang & Xuhong Wang, 2021. "An Improved Analytical Model for Crosstalk of SiC MOSFET in a Bridge-Arm Configuration," Energies, MDPI, vol. 14(3), pages 1-30, January.
  • Handle: RePEc:gam:jeners:v:14:y:2021:i:3:p:683-:d:488995
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    References listed on IDEAS

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    1. Zhiqin Zhao & Xiaoqiong He, 2019. "Research on Digital Synchronous Rectification for a High-Efficiency DC-DC Converter in an Auxiliary Power Supply System of Magnetic Levitation," Energies, MDPI, vol. 13(1), pages 1-19, December.
    2. Haider Zaman & Xiaohua Wu & Xiancheng Zheng & Shahbaz Khan & Husan Ali, 2018. "Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter," Energies, MDPI, vol. 11(11), pages 1-19, November.
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    Cited by:

    1. Yanming Xu & Carl Ngai Man Ho & Avishek Ghosh & Dharshana Muthumuni, 2021. "Generalized Behavioral Modelling Methodology of Switch-Diode Cell for Power Loss Prediction in Electromagnetic Transient Simulation," Energies, MDPI, vol. 14(5), pages 1-23, March.

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