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The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium

Author

Listed:
  • Peter Deák

    (Wigner Research Centre for Physics)

  • Péter Udvarhelyi

    (Wigner Research Centre for Physics
    Budapest University of Technology and Economics)

  • Gergő Thiering

    (Wigner Research Centre for Physics)

  • Adam Gali

    (Wigner Research Centre for Physics
    Budapest University of Technology and Economics)

Abstract

Thermal equilibrium is reached when the system assumes its lowest energy. This can be hindered by kinetic reasons; however, it is a general assumption that the ground state can be eventually reached. Here, we show that this is not always necessarily the case. Carbon pairs in silicon have at least three different configurations, one of them (B-configuration) is the G photoluminescence centre. Experiments revealed a bistable nature with the A-configuration. Electronic structure calculations predicted that the C-configuration is the real ground state; however, no experimental evidence was found for its existence. Our calculations show that the formation of the A- and B-configurations is strongly favoured over the most stable C-configuration which cannot be realized in a detectable amount before the pair dissociates. Our results demonstrate that automatized search for complex defects consisting of only the thermodynamically most stable configurations may overlook key candidates for quantum technology applications.

Suggested Citation

  • Peter Deák & Péter Udvarhelyi & Gergő Thiering & Adam Gali, 2023. "The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium," Nature Communications, Nature, vol. 14(1), pages 1-6, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-36090-2
    DOI: 10.1038/s41467-023-36090-2
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    References listed on IDEAS

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    1. Elizabeth M. Y. Lee & Alvin Yu & Juan J. de Pablo & Giulia Galli, 2021. "Stability and molecular pathways to the formation of spin defects in silicon carbide," Nature Communications, Nature, vol. 12(1), pages 1-8, December.
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    Cited by:

    1. K. Jhuria & V. Ivanov & D. Polley & Y. Zhiyenbayev & W. Liu & A. Persaud & W. Redjem & W. Qarony & P. Parajuli & Q. Ji & A. J. Gonsalves & J. Bokor & L. Z. Tan & B. Kanté & T. Schenkel, 2024. "Programmable quantum emitter formation in silicon," Nature Communications, Nature, vol. 15(1), pages 1-8, December.

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