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Tailoring spin defects in diamond by lattice charging

Author

Listed:
  • Felipe Fávaro de Oliveira

    (3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart)

  • Denis Antonov

    (3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart)

  • Ya Wang

    (3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart)

  • Philipp Neumann

    (3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart)

  • Seyed Ali Momenzadeh

    (3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart)

  • Timo Häußermann

    (3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart)

  • Alberto Pasquarelli

    (Institute of Electron Devices and Circuits, University of Ulm)

  • Andrej Denisenko

    (3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart)

  • Jörg Wrachtrup

    (3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart
    Max Planck Institute for Solid State Research)

Abstract

Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometre positioning accuracy, which is typically achieved by low-energy ion implantation. A drawback of this technique is the significant residual lattice damage, which degrades the performance of spins in quantum applications. Here we show that the charge state of implantation-induced defects drastically influences the formation of lattice defects during thermal annealing. Charging of vacancies at, for example, nitrogen implantation sites suppresses the formation of vacancy complexes, resulting in tenfold-improved spin coherence times and twofold-improved formation yield of nitrogen-vacancy centres in diamond. This is achieved by confining implantation defects into the space-charge layer of free carriers generated by a boron-doped diamond structure. By combining these results with numerical calculations, we arrive at a quantitative understanding of the formation and dynamics of the implanted spin defects. These results could improve engineering of quantum devices using solid-state systems.

Suggested Citation

  • Felipe Fávaro de Oliveira & Denis Antonov & Ya Wang & Philipp Neumann & Seyed Ali Momenzadeh & Timo Häußermann & Alberto Pasquarelli & Andrej Denisenko & Jörg Wrachtrup, 2017. "Tailoring spin defects in diamond by lattice charging," Nature Communications, Nature, vol. 8(1), pages 1-8, August.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15409
    DOI: 10.1038/ncomms15409
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    Cited by:

    1. Cunzhi Zhang & Francois Gygi & Giulia Galli, 2023. "Engineering the formation of spin-defects from first principles," Nature Communications, Nature, vol. 14(1), pages 1-8, December.

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