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Dualistic insulator states in 1T-TaS2 crystals

Author

Listed:
  • Yihao Wang

    (Chinese Academy of Sciences)

  • Zhihao Li

    (Chinese Academy of Sciences
    Chinese Academy of Sciences)

  • Xuan Luo

    (Chinese Academy of Sciences)

  • Jingjing Gao

    (Chinese Academy of Sciences)

  • Yuyan Han

    (Chinese Academy of Sciences)

  • Jialiang Jiang

    (Chinese Academy of Sciences)

  • Jin Tang

    (Anhui University)

  • Huanxin Ju

    (Ltd.)

  • Tongrui Li

    (University of Science and Technology of China)

  • Run Lv

    (Chinese Academy of Sciences
    University of Science and Technology of China)

  • Shengtao Cui

    (University of Science and Technology of China)

  • Yingguo Yang

    (Fudan University)

  • Yuping Sun

    (Chinese Academy of Sciences
    Chinese Academy of Sciences
    Nanjing University)

  • Junfa Zhu

    (University of Science and Technology of China)

  • Xingyu Gao

    (Chinese Academy of Sciences)

  • Wenjian Lu

    (Chinese Academy of Sciences)

  • Zhe Sun

    (University of Science and Technology of China
    Nanjing University
    Hefei National Laboratory)

  • Hai Xu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Yimin Xiong

    (Anhui University
    Hefei National Laboratory)

  • Liang Cao

    (Chinese Academy of Sciences)

Abstract

While the monolayer sheet is well-established as a Mott-insulator with a finite energy gap, the insulating nature of bulk 1T-TaS2 crystals remains ambiguous due to their varying dimensionalities and alterable interlayer coupling. In this study, we present a unique approach to unlock the intertwined two-dimensional Mott-insulator and three-dimensional band-insulator states in bulk 1T-TaS2 crystals by structuring a laddering stack along the out-of-plane direction. Through modulating the interlayer coupling, the insulating nature can be switched between band-insulator and Mott-insulator mechanisms. Our findings demonstrate the duality of insulating nature in 1T-TaS2 crystals. By manipulating the translational degree of freedom in layered crystals, our discovery presents a promising strategy for exploring fascinating physics, independent of their dimensionality, thereby offering a “three-dimensional” control for the era of slidetronics.

Suggested Citation

  • Yihao Wang & Zhihao Li & Xuan Luo & Jingjing Gao & Yuyan Han & Jialiang Jiang & Jin Tang & Huanxin Ju & Tongrui Li & Run Lv & Shengtao Cui & Yingguo Yang & Yuping Sun & Junfa Zhu & Xingyu Gao & Wenjia, 2024. "Dualistic insulator states in 1T-TaS2 crystals," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-47728-0
    DOI: 10.1038/s41467-024-47728-0
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