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Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Author

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  • Doohee Cho

    (Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS)
    Pohang University of Science and Technology (POSTECH))

  • Sangmo Cheon

    (Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS)
    Pohang University of Science and Technology (POSTECH))

  • Ki-Seok Kim

    (Pohang University of Science and Technology (POSTECH))

  • Sung-Hoon Lee

    (Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS)
    Pohang University of Science and Technology (POSTECH))

  • Yong-Heum Cho

    (Pohang University of Science and Technology (POSTECH)
    Laboratory for Pohang Emergent Materials and Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology)

  • Sang-Wook Cheong

    (Laboratory for Pohang Emergent Materials and Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology
    Rutgers University)

  • Han Woong Yeom

    (Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS)
    Pohang University of Science and Technology (POSTECH))

Abstract

The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.

Suggested Citation

  • Doohee Cho & Sangmo Cheon & Ki-Seok Kim & Sung-Hoon Lee & Yong-Heum Cho & Sang-Wook Cheong & Han Woong Yeom, 2016. "Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2," Nature Communications, Nature, vol. 7(1), pages 1-6, April.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10453
    DOI: 10.1038/ncomms10453
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    Cited by:

    1. Yihao Wang & Zhihao Li & Xuan Luo & Jingjing Gao & Yuyan Han & Jialiang Jiang & Jin Tang & Huanxin Ju & Tongrui Li & Run Lv & Shengtao Cui & Yingguo Yang & Yuping Sun & Junfa Zhu & Xingyu Gao & Wenjia, 2024. "Dualistic insulator states in 1T-TaS2 crystals," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    2. Anze Mraz & Michele Diego & Andrej Kranjec & Jaka Vodeb & Peter Karpov & Yaroslav Gerasimenko & Jan Ravnik & Yevhenii Vaskivskyi & Rok Venturini & Viktor Kabanov & Benjamin Lipovšek & Marko Topič & Ig, 2023. "Manipulation of fractionalized charge in the metastable topologically entangled state of a doped Wigner crystal," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    3. E. S. Bozin & M. Abeykoon & S. Conradson & G. Baldinozzi & P. Sutar & D. Mihailovic, 2023. "Crystallization of polarons through charge and spin ordering transitions in 1T-TaS2," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    4. Sung-Hoon Lee & Doohee Cho, 2023. "Charge density wave surface reconstruction in a van der Waals layered material," Nature Communications, Nature, vol. 14(1), pages 1-7, December.

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