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Lattice anchoring stabilizes solution-processed semiconductors

Author

Listed:
  • Mengxia Liu

    (University of Toronto)

  • Yuelang Chen

    (University of Toronto)

  • Chih-Shan Tan

    (University of Toronto)

  • Rafael Quintero-Bermudez

    (University of Toronto)

  • Andrew H. Proppe

    (University of Toronto
    University of Toronto)

  • Rahim Munir

    (KAUST Solar Center (KSC) and Physical Sciences and Engineering Division, King Abdullah University of Science and Technology
    Helmholtz-Zentrum Berlin für Materialien und Energie)

  • Hairen Tan

    (University of Toronto
    Nanjing University)

  • Oleksandr Voznyy

    (University of Toronto)

  • Benjamin Scheffel

    (University of Toronto)

  • Grant Walters

    (University of Toronto)

  • Andrew Pak Tao Kam

    (University of Toronto)

  • Bin Sun

    (University of Toronto)

  • Min-Jae Choi

    (University of Toronto)

  • Sjoerd Hoogland

    (University of Toronto)

  • Aram Amassian

    (KAUST Solar Center (KSC) and Physical Sciences and Engineering Division, King Abdullah University of Science and Technology
    North Carolina State University)

  • Shana O. Kelley

    (University of Toronto
    University of Toronto)

  • F. Pelayo García de Arquer

    (University of Toronto)

  • Edward H. Sargent

    (University of Toronto)

Abstract

The stability of solution-processed semiconductors remains an important area for improvement on their path to wider deployment. Inorganic caesium lead halide perovskites have a bandgap well suited to tandem solar cells1 but suffer from an undesired phase transition near room temperature2. Colloidal quantum dots (CQDs) are structurally robust materials prized for their size-tunable bandgap3; however, they also require further advances in stability because they are prone to aggregation and surface oxidization at high temperatures as a consequence of incomplete surface passivation4,5. Here we report ‘lattice-anchored’ hybrid materials that combine caesium lead halide perovskites with lead chalcogenide CQDs, in which lattice matching between the two materials contributes to a stability exceeding that of the constituents. We find that CQDs keep the perovskite in its desired cubic phase, suppressing the transition to the undesired lattice-mismatched phases. The stability of the CQD-anchored perovskite in air is enhanced by an order of magnitude compared with pristine perovskite, and the material remains stable for more than six months at ambient conditions (25 degrees Celsius and about 30 per cent humidity) and more than five hours at 200 degrees Celsius. The perovskite prevents oxidation of the CQD surfaces and reduces the agglomeration of the nanoparticles at 100 degrees Celsius by a factor of five compared with CQD controls. The matrix-protected CQDs show a photoluminescence quantum efficiency of 30 per cent for a CQD solid emitting at infrared wavelengths. The lattice-anchored CQD:perovskite solid exhibits a doubling in charge carrier mobility as a result of a reduced energy barrier for carrier hopping compared with the pure CQD solid. These benefits have potential uses in solution-processed optoelectronic devices.

Suggested Citation

  • Mengxia Liu & Yuelang Chen & Chih-Shan Tan & Rafael Quintero-Bermudez & Andrew H. Proppe & Rahim Munir & Hairen Tan & Oleksandr Voznyy & Benjamin Scheffel & Grant Walters & Andrew Pak Tao Kam & Bin Su, 2019. "Lattice anchoring stabilizes solution-processed semiconductors," Nature, Nature, vol. 570(7759), pages 96-101, June.
  • Handle: RePEc:nat:nature:v:570:y:2019:i:7759:d:10.1038_s41586-019-1239-7
    DOI: 10.1038/s41586-019-1239-7
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    Cited by:

    1. Alexander J. Gillett & Claire Tonnelé & Giacomo Londi & Gaetano Ricci & Manon Catherin & Darcy M. L. Unson & David Casanova & Frédéric Castet & Yoann Olivier & Weimin M. Chen & Elena Zaborova & Emrys , 2021. "Spontaneous exciton dissociation enables spin state interconversion in delayed fluorescence organic semiconductors," Nature Communications, Nature, vol. 12(1), pages 1-10, December.
    2. Li Zhai & Sara T. Gebre & Bo Chen & Dan Xu & Junze Chen & Zijian Li & Yawei Liu & Hua Yang & Chongyi Ling & Yiyao Ge & Wei Zhai & Changsheng Chen & Lu Ma & Qinghua Zhang & Xuefei Li & Yujie Yan & Xiny, 2023. "Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

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