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Anisotropic dislocation-domain wall interactions in ferroelectrics

Author

Listed:
  • Fangping Zhuo

    (Technical University of Darmstadt)

  • Xiandong Zhou

    (Technical University of Darmstadt)

  • Shuang Gao

    (Technical University of Darmstadt
    Southwest Jiaotong University)

  • Marion Höfling

    (Technical University of Denmark)

  • Felix Dietrich

    (Technical University of Darmstadt)

  • Pedro B. Groszewicz

    (Delft University of Technology)

  • Lovro Fulanović

    (Technical University of Darmstadt)

  • Patrick Breckner

    (Technical University of Darmstadt)

  • Andreas Wohninsland

    (Technical University of Darmstadt)

  • Bai-Xiang Xu

    (Technical University of Darmstadt)

  • Hans-Joachim Kleebe

    (Technical University of Darmstadt)

  • Xiaoli Tan

    (Iowa State University)

  • Jurij Koruza

    (Graz University of Technology)

  • Dragan Damjanovic

    (École Polytechnique Fédérale de Lausanne)

  • Jürgen Rödel

    (Technical University of Darmstadt)

Abstract

Dislocations are usually expected to degrade electrical, thermal and optical functionality and to tune mechanical properties of materials. Here, we demonstrate a general framework for the control of dislocation–domain wall interactions in ferroics, employing an imprinted dislocation network. Anisotropic dielectric and electromechanical properties are engineered in barium titanate crystals via well-controlled line-plane relationships, culminating in extraordinary and stable large-signal dielectric permittivity (≈23100) and piezoelectric coefficient (≈2470 pm V–1). In contrast, a related increase in properties utilizing point-plane relation prompts a dramatic cyclic degradation. Observed dielectric and piezoelectric properties are rationalized using transmission electron microscopy and time- and cycle-dependent nuclear magnetic resonance paired with X-ray diffraction. Succinct mechanistic understanding is provided by phase-field simulations and driving force calculations of the described dislocation–domain wall interactions. Our 1D-2D defect approach offers a fertile ground for tailoring functionality in a wide range of functional material systems.

Suggested Citation

  • Fangping Zhuo & Xiandong Zhou & Shuang Gao & Marion Höfling & Felix Dietrich & Pedro B. Groszewicz & Lovro Fulanović & Patrick Breckner & Andreas Wohninsland & Bai-Xiang Xu & Hans-Joachim Kleebe & Xia, 2022. "Anisotropic dislocation-domain wall interactions in ferroelectrics," Nature Communications, Nature, vol. 13(1), pages 1-11, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-34304-7
    DOI: 10.1038/s41467-022-34304-7
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    References listed on IDEAS

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