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Ferroelastic domain switching dynamics under electrical and mechanical excitations

Author

Listed:
  • Peng Gao

    (University of Michigan
    Present address: Brookhaven National Laboratory, Upton, New York, New York 11973, USA)

  • Jason Britson

    (Penn State University, University Park)

  • Christopher T. Nelson

    (University of Michigan)

  • Jacob R. Jokisaari

    (University of Michigan)

  • Chen Duan

    (Penn State University, University Park)

  • Morgan Trassin

    (University of California)

  • Seung-Hyub Baek

    (University of Wisconsin, Madison, Wisconsin 53706, USA)

  • Hua Guo

    (National Center for Electron Microscopy, Lawrence Berkeley National Laboratory)

  • Linze Li

    (University of Michigan)

  • Yiran Wang

    (University of Michigan)

  • Ying-Hao Chu

    (University of California)

  • Andrew M. Minor

    (University of California
    National Center for Electron Microscopy, Lawrence Berkeley National Laboratory)

  • Chang-Beom Eom

    (University of Wisconsin, Madison, Wisconsin 53706, USA)

  • Ramamoorthy Ramesh

    (University of California)

  • Long-Qing Chen

    (Penn State University, University Park)

  • Xiaoqing Pan

    (University of Michigan)

Abstract

In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

Suggested Citation

  • Peng Gao & Jason Britson & Christopher T. Nelson & Jacob R. Jokisaari & Chen Duan & Morgan Trassin & Seung-Hyub Baek & Hua Guo & Linze Li & Yiran Wang & Ying-Hao Chu & Andrew M. Minor & Chang-Beom Eom, 2014. "Ferroelastic domain switching dynamics under electrical and mechanical excitations," Nature Communications, Nature, vol. 5(1), pages 1-8, September.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms4801
    DOI: 10.1038/ncomms4801
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    Cited by:

    1. Fangping Zhuo & Xiandong Zhou & Shuang Gao & Marion Höfling & Felix Dietrich & Pedro B. Groszewicz & Lovro Fulanović & Patrick Breckner & Andreas Wohninsland & Bai-Xiang Xu & Hans-Joachim Kleebe & Xia, 2022. "Anisotropic dislocation-domain wall interactions in ferroelectrics," Nature Communications, Nature, vol. 13(1), pages 1-11, December.

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