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In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering

Author

Listed:
  • J. W. Lee

    (University of Wisconsin-Madison)

  • K. Eom

    (University of Wisconsin-Madison)

  • T. R. Paudel

    (University of Nebraska
    South Dakota School of Mines and Technology)

  • B. Wang

    (The Pennsylvania State University)

  • H. Lu

    (University of Nebraska)

  • H. X. Huyan

    (University of California)

  • S. Lindemann

    (University of Wisconsin-Madison)

  • S. Ryu

    (University of Wisconsin-Madison)

  • H. Lee

    (University of Wisconsin-Madison)

  • T. H. Kim

    (University of Wisconsin-Madison)

  • Y. Yuan

    (The Pennsylvania State University)

  • J. A. Zorn

    (The Pennsylvania State University)

  • S. Lei

    (The Pennsylvania State University)

  • W. P. Gao

    (University of California)

  • T. Tybell

    (Norwegian University of Science and Technology)

  • V. Gopalan

    (The Pennsylvania State University)

  • X. Q. Pan

    (University of California
    University of California
    University of California)

  • A. Gruverman

    (University of Nebraska)

  • L. Q. Chen

    (The Pennsylvania State University)

  • E. Y. Tsymbal

    (University of Nebraska)

  • C. B. Eom

    (University of Wisconsin-Madison)

Abstract

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO3 thin films. Theoretical calculations predict the key role of the BaTiO3/PrScO3 $${({{{{{\boldsymbol{110}}}}}})}_{{{{{{\bf{O}}}}}}}$$ ( 110 ) O substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.

Suggested Citation

  • J. W. Lee & K. Eom & T. R. Paudel & B. Wang & H. Lu & H. X. Huyan & S. Lindemann & S. Ryu & H. Lee & T. H. Kim & Y. Yuan & J. A. Zorn & S. Lei & W. P. Gao & T. Tybell & V. Gopalan & X. Q. Pan & A. Gru, 2021. "In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering," Nature Communications, Nature, vol. 12(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-26660-7
    DOI: 10.1038/s41467-021-26660-7
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