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Revealing the role of defects in ferroelectric switching with atomic resolution

Author

Listed:
  • Peng Gao

    (University of Michigan-Ann Arbor)

  • Christopher T. Nelson

    (University of Michigan-Ann Arbor)

  • Jacob R. Jokisaari

    (University of Michigan-Ann Arbor)

  • Seung-Hyub Baek

    (University of Wisconsin-Madison)

  • Chung Wung Bark

    (University of Wisconsin-Madison)

  • Yi Zhang

    (University of Michigan-Ann Arbor
    Nanjing University)

  • Enge Wang

    (International Center for Quantum Materials and School of Physics, Peking University)

  • Darrell G. Schlom

    (Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

  • Chang-Beom Eom

    (University of Wisconsin-Madison)

  • Xiaoqing Pan

    (University of Michigan-Ann Arbor)

Abstract

Ferroelectric materials are characterized by a spontaneous polarization, which can be reoriented with an applied electric field. The switching between polarized domains is mediated by nanoscale defects. Understanding the role of defects in ferroelectric switching is critical for practical applications such as non-volatile memories. This is especially the case for ferroelectric nanostructures and thin films in which the entire switching volume is proximate to a defective surface. Here we report the nanoscale ferroelectric switching of a tetragonal PbZr0.2Ti0.8O3 thin film under an applied electric field using in situ transmission electron microscopy. We found that the intrinsic electric fields formed at ferroelectric/electrode interfaces determine the nucleation sites and growth rates of ferroelectric domains and the orientation and mobility of domain walls, whereas dislocations exert a weak pinning force on domain wall motion.

Suggested Citation

  • Peng Gao & Christopher T. Nelson & Jacob R. Jokisaari & Seung-Hyub Baek & Chung Wung Bark & Yi Zhang & Enge Wang & Darrell G. Schlom & Chang-Beom Eom & Xiaoqing Pan, 2011. "Revealing the role of defects in ferroelectric switching with atomic resolution," Nature Communications, Nature, vol. 2(1), pages 1-6, September.
    • Handle: RePEc:nat:natcom:v:2:y:2011:i:1:d:10.1038_ncomms1600
    DOI: 10.1038/ncomms1600
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    Cited by:

    1. Fangping Zhuo & Xiandong Zhou & Shuang Gao & Marion Höfling & Felix Dietrich & Pedro B. Groszewicz & Lovro Fulanović & Patrick Breckner & Andreas Wohninsland & Bai-Xiang Xu & Hans-Joachim Kleebe & Xia, 2022. "Anisotropic dislocation-domain wall interactions in ferroelectrics," Nature Communications, Nature, vol. 13(1), pages 1-11, December.

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