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Low-defect-density WS2 by hydroxide vapor phase deposition

Author

Listed:
  • Yi Wan

    (King Abdullah University of Science and Technology (KAUST)
    The University of Hong Kong)

  • En Li

    (The Hong Kong University of Science and Technology)

  • Zhihao Yu

    (Taiwan Semiconductor Manufacturing Company (TSMC)
    Nanjing University)

  • Jing-Kai Huang

    (University of New South Wales)

  • Ming-Yang Li

    (Taiwan Semiconductor Manufacturing Company (TSMC))

  • Ang-Sheng Chou

    (Taiwan Semiconductor Manufacturing Company (TSMC))

  • Yi-Te Lee

    (National Yang Ming Chiao Tung University)

  • Chien-Ju Lee

    (National Yang Ming Chiao Tung University)

  • Hung-Chang Hsu

    (National Taiwan University)

  • Qin Zhan

    (Nanjing Tech University)

  • Areej Aljarb

    (King Abdulaziz University (KAAU))

  • Jui-Han Fu

    (King Abdullah University of Science and Technology (KAUST)
    The University of Tokyo)

  • Shao-Pin Chiu

    (National Yang Ming Chiao Tung University)

  • Xinran Wang

    (Nanjing University)

  • Juhn-Jong Lin

    (National Yang Ming Chiao Tung University)

  • Ya-Ping Chiu

    (National Taiwan University)

  • Wen-Hao Chang

    (National Yang Ming Chiao Tung University
    Academia Sinica)

  • Han Wang

    (Taiwan Semiconductor Manufacturing Company (TSMC))

  • Yumeng Shi

    (Shenzhen University)

  • Nian Lin

    (The Hong Kong University of Science and Technology)

  • Yingchun Cheng

    (Nanjing Tech University)

  • Vincent Tung

    (King Abdullah University of Science and Technology (KAUST)
    The University of Tokyo)

  • Lain-Jong Li

    (The University of Hong Kong)

Abstract

Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.

Suggested Citation

  • Yi Wan & En Li & Zhihao Yu & Jing-Kai Huang & Ming-Yang Li & Ang-Sheng Chou & Yi-Te Lee & Chien-Ju Lee & Hung-Chang Hsu & Qin Zhan & Areej Aljarb & Jui-Han Fu & Shao-Pin Chiu & Xinran Wang & Juhn-Jong, 2022. "Low-defect-density WS2 by hydroxide vapor phase deposition," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-31886-0
    DOI: 10.1038/s41467-022-31886-0
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    References listed on IDEAS

    as
    1. Prasana K. Sahoo & Shahriar Memaran & Yan Xin & Luis Balicas & Humberto R. Gutiérrez, 2018. "One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy," Nature, Nature, vol. 553(7686), pages 63-67, January.
    2. Ming-Yang Li & Sheng-Kai Su & H.-S. Philip Wong & Lain-Jong Li, 2019. "How 2D semiconductors could extend Moore’s law," Nature, Nature, vol. 567(7747), pages 169-170, March.
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    2. Jingxian Zhong & Dawei Zhou & Qi Bai & Chao Liu & Xinlian Fan & Hehe Zhang & Congzhou Li & Ran Jiang & Peiyi Zhao & Jiaxiao Yuan & Xiaojiao Li & Guixiang Zhan & Hongyu Yang & Jing Liu & Xuefen Song & , 2024. "Growth of millimeter-sized 2D metal iodide crystals induced by ion-specific preference at water-air interfaces," Nature Communications, Nature, vol. 15(1), pages 1-10, December.

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