IDEAS home Printed from https://ideas.repec.org/a/nat/natcom/v13y2022i1d10.1038_s41467-022-31886-0.html
   My bibliography  Save this article

Low-defect-density WS2 by hydroxide vapor phase deposition

Author

Listed:
  • Yi Wan

    (King Abdullah University of Science and Technology (KAUST)
    The University of Hong Kong)

  • En Li

    (The Hong Kong University of Science and Technology)

  • Zhihao Yu

    (Taiwan Semiconductor Manufacturing Company (TSMC)
    Nanjing University)

  • Jing-Kai Huang

    (University of New South Wales)

  • Ming-Yang Li

    (Taiwan Semiconductor Manufacturing Company (TSMC))

  • Ang-Sheng Chou

    (Taiwan Semiconductor Manufacturing Company (TSMC))

  • Yi-Te Lee

    (National Yang Ming Chiao Tung University)

  • Chien-Ju Lee

    (National Yang Ming Chiao Tung University)

  • Hung-Chang Hsu

    (National Taiwan University)

  • Qin Zhan

    (Nanjing Tech University)

  • Areej Aljarb

    (King Abdulaziz University (KAAU))

  • Jui-Han Fu

    (King Abdullah University of Science and Technology (KAUST)
    The University of Tokyo)

  • Shao-Pin Chiu

    (National Yang Ming Chiao Tung University)

  • Xinran Wang

    (Nanjing University)

  • Juhn-Jong Lin

    (National Yang Ming Chiao Tung University)

  • Ya-Ping Chiu

    (National Taiwan University)

  • Wen-Hao Chang

    (National Yang Ming Chiao Tung University
    Academia Sinica)

  • Han Wang

    (Taiwan Semiconductor Manufacturing Company (TSMC))

  • Yumeng Shi

    (Shenzhen University)

  • Nian Lin

    (The Hong Kong University of Science and Technology)

  • Yingchun Cheng

    (Nanjing Tech University)

  • Vincent Tung

    (King Abdullah University of Science and Technology (KAUST)
    The University of Tokyo)

  • Lain-Jong Li

    (The University of Hong Kong)

Abstract

Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.

Suggested Citation

  • Yi Wan & En Li & Zhihao Yu & Jing-Kai Huang & Ming-Yang Li & Ang-Sheng Chou & Yi-Te Lee & Chien-Ju Lee & Hung-Chang Hsu & Qin Zhan & Areej Aljarb & Jui-Han Fu & Shao-Pin Chiu & Xinran Wang & Juhn-Jong, 2022. "Low-defect-density WS2 by hydroxide vapor phase deposition," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-31886-0
    DOI: 10.1038/s41467-022-31886-0
    as

    Download full text from publisher

    File URL: https://www.nature.com/articles/s41467-022-31886-0
    File Function: Abstract
    Download Restriction: no

    File URL: https://libkey.io/10.1038/s41467-022-31886-0?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    References listed on IDEAS

    as
    1. Prasana K. Sahoo & Shahriar Memaran & Yan Xin & Luis Balicas & Humberto R. Gutiérrez, 2018. "One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy," Nature, Nature, vol. 553(7686), pages 63-67, January.
    2. Ming-Yang Li & Sheng-Kai Su & H.-S. Philip Wong & Lain-Jong Li, 2019. "How 2D semiconductors could extend Moore’s law," Nature, Nature, vol. 567(7747), pages 169-170, March.
    3. Isabelle Ferain & Cynthia A. Colinge & Jean-Pierre Colinge, 2011. "Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors," Nature, Nature, vol. 479(7373), pages 310-316, November.
    4. Jinhua Hong & Zhixin Hu & Matt Probert & Kun Li & Danhui Lv & Xinan Yang & Lin Gu & Nannan Mao & Qingliang Feng & Liming Xie & Jin Zhang & Dianzhong Wu & Zhiyong Zhang & Chuanhong Jin & Wei Ji & Xixia, 2015. "Exploring atomic defects in molybdenum disulphide monolayers," Nature Communications, Nature, vol. 6(1), pages 1-8, May.
    Full references (including those not matched with items on IDEAS)

    Citations

    Citations are extracted by the CitEc Project, subscribe to its RSS feed for this item.
    as


    Cited by:

    1. Luying Song & Ying Zhao & Bingqian Xu & Ruofan Du & Hui Li & Wang Feng & Junbo Yang & Xiaohui Li & Zijia Liu & Xia Wen & Yanan Peng & Yuzhu Wang & Hang Sun & Ling Huang & Yulin Jiang & Yao Cai & Xue J, 2024. "Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    2. Jingxian Zhong & Dawei Zhou & Qi Bai & Chao Liu & Xinlian Fan & Hehe Zhang & Congzhou Li & Ran Jiang & Peiyi Zhao & Jiaxiao Yuan & Xiaojiao Li & Guixiang Zhan & Hongyu Yang & Jing Liu & Xuefen Song & , 2024. "Growth of millimeter-sized 2D metal iodide crystals induced by ion-specific preference at water-air interfaces," Nature Communications, Nature, vol. 15(1), pages 1-10, December.

    Most related items

    These are the items that most often cite the same works as this one and are cited by the same works as this one.
    1. Yanfei Zhao & Mukesh Tripathi & Kristiāns Čerņevičs & Ahmet Avsar & Hyun Goo Ji & Juan Francisco Gonzalez Marin & Cheol-Yeon Cheon & Zhenyu Wang & Oleg V. Yazyev & Andras Kis, 2023. "Electrical spectroscopy of defect states and their hybridization in monolayer MoS2," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    2. Lu Li & Qinqin Wang & Fanfan Wu & Qiaoling Xu & Jinpeng Tian & Zhiheng Huang & Qinghe Wang & Xuan Zhao & Qinghua Zhang & Qinkai Fan & Xiuzhen Li & Yalin Peng & Yangkun Zhang & Kunshan Ji & Aomiao Zhi , 2024. "Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    3. Yonggang Zuo & Can Liu & Liping Ding & Ruixi Qiao & Jinpeng Tian & Chang Liu & Qinghe Wang & Guodong Xue & Yilong You & Quanlin Guo & Jinhuan Wang & Ying Fu & Kehai Liu & Xu Zhou & Hao Hong & Muhong W, 2022. "Robust growth of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
    4. Junzhu Li & Abdus Samad & Yue Yuan & Qingxiao Wang & Mohamed Nejib Hedhili & Mario Lanza & Udo Schwingenschlögl & Iwnetim Abate & Deji Akinwande & Zheng Liu & Bo Tian & Xixiang Zhang, 2024. "Single-crystal hBN Monolayers from Aligned Hexagonal Islands," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    5. Jie Xu & Xiong-Xiong Xue & Gonglei Shao & Changfei Jing & Sheng Dai & Kun He & Peipei Jia & Shun Wang & Yifei Yuan & Jun Luo & Jun Lu, 2023. "Atomic-level polarization in electric fields of defects for electrocatalysis," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    6. Yeonghun Lee & Yaoqiao Hu & Xiuyao Lang & Dongwook Kim & Kejun Li & Yuan Ping & Kai-Mei C. Fu & Kyeongjae Cho, 2022. "Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths," Nature Communications, Nature, vol. 13(1), pages 1-10, December.
    7. Song Li & Gergő Thiering & Péter Udvarhelyi & Viktor Ivády & Adam Gali, 2022. "Carbon defect qubit in two-dimensional WS2," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
    8. Jian Zhou & Chunchen Zhang & Li Shi & Xiaoqing Chen & Tae Soo Kim & Minseung Gyeon & Jian Chen & Jinlan Wang & Linwei Yu & Xinran Wang & Kibum Kang & Emanuele Orgiu & Paolo Samorì & Kenji Watanabe & T, 2022. "Non-invasive digital etching of van der Waals semiconductors," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    9. Thushani Silva & Mirette Fawzy & Amirhossein Hasani & Hamidreza Ghanbari & Amin Abnavi & Abdelrahman Askar & Yue Ling & Mohammad Reza Mohammadzadeh & Fahmid Kabir & Ribwar Ahmadi & Miriam Rosin & Kare, 2022. "Ultrasensitive rapid cytokine sensors based on asymmetric geometry two-dimensional MoS2 diodes," Nature Communications, Nature, vol. 13(1), pages 1-10, December.
    10. Mohammad Qorbani & Amr Sabbah & Ying-Ren Lai & Septia Kholimatussadiah & Shaham Quadir & Chih-Yang Huang & Indrajit Shown & Yi-Fan Huang & Michitoshi Hayashi & Kuei-Hsien Chen & Li-Chyong Chen, 2022. "Atomistic insights into highly active reconstructed edges of monolayer 2H-WSe2 photocatalyst," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    11. Xiaosong Wu & Shaocong Wang & Wei Huang & Yu Dong & Zhongrui Wang & Weiguo Huang, 2023. "Wearable in-sensor reservoir computing using optoelectronic polymers with through-space charge-transport characteristics for multi-task learning," Nature Communications, Nature, vol. 14(1), pages 1-12, December.
    12. Xia Liu & Berke Erbas & Ana Conde-Rubio & Norma Rivano & Zhenyu Wang & Jin Jiang & Siiri Bienz & Naresh Kumar & Thibault Sohier & Marcos Penedo & Mitali Banerjee & Georg Fantner & Renato Zenobi & Nico, 2024. "Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs," Nature Communications, Nature, vol. 15(1), pages 1-12, December.
    13. Mengshi Yu & Congwei Tan & Yuling Yin & Junchuan Tang & Xiaoyin Gao & Hongtao Liu & Feng Ding & Hailin Peng, 2024. "Integrated 2D multi-fin field-effect transistors," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    14. Qiuyang Li & Adam Alfrey & Jiaqi Hu & Nathanial Lydick & Eunice Paik & Bin Liu & Haiping Sun & Yang Lu & Ruoyu Wang & Stephen Forrest & Hui Deng, 2023. "Macroscopic transition metal dichalcogenides monolayers with uniformly high optical quality," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    15. Jeongwon Park & Seung Jae Kwak & Sumin Kang & Saeyoung Oh & Bongki Shin & Gichang Noh & Tae Soo Kim & Changhwan Kim & Hyeonbin Park & Seung Hoon Oh & Woojin Kang & Namwook Hur & Hyun-Jun Chai & Minsoo, 2024. "Area-selective atomic layer deposition on 2D monolayer lateral superlattices," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    16. Zhaojun Li & Hope Bretscher & Yunwei Zhang & Géraud Delport & James Xiao & Alpha Lee & Samuel D. Stranks & Akshay Rao, 2021. "Mechanistic insight into the chemical treatments of monolayer transition metal disulfides for photoluminescence enhancement," Nature Communications, Nature, vol. 12(1), pages 1-9, December.
    17. Roberto Rosati & Ioannis Paradisanos & Libai Huang & Ziyang Gan & Antony George & Kenji Watanabe & Takashi Taniguchi & Laurent Lombez & Pierre Renucci & Andrey Turchanin & Bernhard Urbaszek & Ermin Ma, 2023. "Interface engineering of charge-transfer excitons in 2D lateral heterostructures," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    18. Biswajit Datta & Mandeep Khatoniar & Prathmesh Deshmukh & Félix Thouin & Rezlind Bushati & Simone Liberato & Stephane Kena Cohen & Vinod M. Menon, 2022. "Highly nonlinear dipolar exciton-polaritons in bilayer MoS2," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
    19. Mengjiao Han & Cong Wang & Kangdi Niu & Qishuo Yang & Chuanshou Wang & Xi Zhang & Junfeng Dai & Yujia Wang & Xiuliang Ma & Junling Wang & Lixing Kang & Wei Ji & Junhao Lin, 2022. "Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite," Nature Communications, Nature, vol. 13(1), pages 1-9, December.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-31886-0. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    If CitEc recognized a bibliographic reference but did not link an item in RePEc to it, you can help with this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.nature.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.