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Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

Author

Listed:
  • Isabelle Ferain

    (Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade)

  • Cynthia A. Colinge

    (Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade)

  • Jean-Pierre Colinge

    (Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade)

Abstract

For more than four decades, transistors have been shrinking exponentially in size, and therefore the number of transistors in a single microelectronic chip has been increasing exponentially. Such an increase in packing density was made possible by continually shrinking the metal–oxide–semiconductor field-effect transistor (MOSFET). In the current generation of transistors, the transistor dimensions have shrunk to such an extent that the electrical characteristics of the device can be markedly degraded, making it unlikely that the exponential decrease in transistor size can continue. Recently, however, a new generation of MOSFETs, called multigate transistors, has emerged, and this multigate geometry will allow the continuing enhancement of computer performance into the next decade.

Suggested Citation

  • Isabelle Ferain & Cynthia A. Colinge & Jean-Pierre Colinge, 2011. "Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors," Nature, Nature, vol. 479(7373), pages 310-316, November.
  • Handle: RePEc:nat:nature:v:479:y:2011:i:7373:d:10.1038_nature10676
    DOI: 10.1038/nature10676
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    Cited by:

    1. Yi Wan & En Li & Zhihao Yu & Jing-Kai Huang & Ming-Yang Li & Ang-Sheng Chou & Yi-Te Lee & Chien-Ju Lee & Hung-Chang Hsu & Qin Zhan & Areej Aljarb & Jui-Han Fu & Shao-Pin Chiu & Xinran Wang & Juhn-Jong, 2022. "Low-defect-density WS2 by hydroxide vapor phase deposition," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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