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Exploring atomic defects in molybdenum disulphide monolayers

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  • Jinhua Hong

    (State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University)

  • Zhixin Hu

    (Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China)

  • Matt Probert

    (University of York, Heslington, York YO10 5DD, UK)

  • Kun Li

    (Advanced Nanofabrication, Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST))

  • Danhui Lv

    (State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University)

  • Xinan Yang

    (Instituteof Physics, Chinese Academy of Sciences, c/o Collaborative Innovation Center of Quantum Matter)

  • Lin Gu

    (Instituteof Physics, Chinese Academy of Sciences, c/o Collaborative Innovation Center of Quantum Matter)

  • Nannan Mao

    (CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology
    Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University)

  • Qingliang Feng

    (CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology)

  • Liming Xie

    (CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology)

  • Jin Zhang

    (Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University)

  • Dianzhong Wu

    (Peking University)

  • Zhiyong Zhang

    (Peking University)

  • Chuanhong Jin

    (State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University)

  • Wei Ji

    (Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China
    Collaborative Innovation Center of Advanced Microstructures, Shanghai Jiao Tong University)

  • Xixiang Zhang

    (Advanced Nanofabrication, Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST))

  • Jun Yuan

    (State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University
    University of York, Heslington, York YO10 5DD, UK)

  • Ze Zhang

    (State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University)

Abstract

Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 1013 cm−2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

Suggested Citation

  • Jinhua Hong & Zhixin Hu & Matt Probert & Kun Li & Danhui Lv & Xinan Yang & Lin Gu & Nannan Mao & Qingliang Feng & Liming Xie & Jin Zhang & Dianzhong Wu & Zhiyong Zhang & Chuanhong Jin & Wei Ji & Xixia, 2015. "Exploring atomic defects in molybdenum disulphide monolayers," Nature Communications, Nature, vol. 6(1), pages 1-8, May.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7293
    DOI: 10.1038/ncomms7293
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